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Vishay N-Channel MOSFET, 75 A, 60 V, Enhancement Mode, 4-Pin SO-8 PowerPAK Package SQJA66EP-T1_GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.1mm |
| Length | 5mm |
| Model | SQJA66EP-T1_GE3 |
| Width | 6.25mm |
| Mount Type | Surface |
| Series | SQJA66EP_RC |
| Maximum Operating Temperature | 175°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 75A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 6.9mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 68W |
| Typical Gate Charge Qg @ Vgs | 64.9nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Supports continuous drain current up to 75 amperes.
- Maximum drain-source voltage of 60 volts ensures reliable operation.
- Low Rds(on) of 6.9 milliohms minimizes power losses.
- Operates efficiently between -55°C and 175°C temperatures.
- Typical gate charge of 64.9 nanoCoulombs allows fast switching.
- Power dissipation capacity of up to 68 watts.
- Enhanced device with a maximum gate-source voltage of 20 volts.
- Compact package dimensions of 5 mm length and 6.25 mm width.
Product Description
Vishay SQJA66EP-T1_GE3 is a high-performance N-Channel MOSFET designed for robust industrial, automotive, and electronic applications requiring efficient switching and power handling capability.
This enhancement mode transistor supports a maximum continuous drain current of 75 A and can withstand drain-source voltages up to 60 V, making it suitable for medium power circuits.
Housed in a surface-mount PowerPAK SO-8 package with a 4-pin configuration, it offers a low drain-source resistance of 6.9 mΩ, ensuring reduced conduction losses and improved thermal performance.
The device operates reliably in a wide temperature range from -55°C to 175°C and meets the demanding AEC-Q101 automotive standard, confirming its suitability for automotive electronics and other harsh environments.
Typical gate charge of 64.9 nC allows for rapid switching events in power management and driver circuits. The maximum gate-source voltage rating of 20 V ensures safe operation in high-voltage gate drive systems.
Its compact dimensions of 5 mm length, 6.25 mm width, and 1.1 mm height make it compatible with dense PCB layouts. Supports continuous drain current up to 75 amperes. Maximum drain-source voltage rating of 60 volts. Low on-resistance of 6.9 milliohms minimizes power losses.
Wide operating temperature range from -55°C to 175°C. Typical gate charge enables fast switching capabilities. Maximum power dissipation of 68 watts. Enhancement mode device with 4-pin SO-8 PowerPAK package. Compliant with automotive AEC-Q101 standard.
Compact package size suitable for surface mount applications. Forward voltage of 1.2 volts for efficient conduction. This MOSFET is ideal for use in industrial controls, automotive power electronics, power supplies, and switching circuits in consumer and commercial devices.
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Frequently Asked Questions
The Vishay SQJA66EP-T1_GE3 supports a maximum continuous drain current of 75 amperes.
This model has a maximum drain-source voltage rating of 60 volts, ensuring reliable operation in various applications.
The on-resistance (Rds(on)) of this MOSFET is 6.9 milliohms, which minimizes power losses during operation.
It operates efficiently within a temperature range of -55°C to 175°C, making it suitable for harsh environments.
The typical gate charge for the Vishay SQJA66EP-T1_GE3 is 64.9 nanoCoulombs, allowing for fast switching capabilities.
This model can dissipate up to 68 watts of power, which is important for managing thermal performance in applications.
The Vishay SQJA66EP-T1_GE3 comes in a surface-mount SO-8 package with dimensions of 5 mm length, 6.25 mm width, and 1.1 mm height.
This device meets the AEC-Q101 automotive standard, confirming its suitability for automotive electronics.
The maximum gate-source voltage rating for this MOSFET is 20 volts, ensuring safe operation in high-voltage gate drive systems.
It is suitable for industrial controls, automotive power electronics, power supplies, and switching circuits in consumer and commercial devices.
The Vishay SQJA66EP-T1_GE3 has a 4-pin configuration, making it compatible with various PCB layouts.
This model is an N-channel MOSFET, designed for efficient switching and power handling capabilities.
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