Infineon CoolSiC N-Channel MOSFET 28 A, 650 V Enhancement Mode, 4-Pin TO-247 IMZA65R072M1HXKSA1

Infineon's IMZA65R072M1HXKSA1 CoolSiC N-Channel MOSFET is a high-performance semiconductor device optimized for power applications. It delivers a maximum continuous drain current of 28 A and can withstand a maximum drain-source voltage of 650 V, packaged in a robust 4-pin TO-247 through-hole configuration.

This MOSFET leverages silicon carbide (SiC) technology, providing superior electrical and thermal performance compared to traditional silicon devices. The trench semiconductor structure ensures low losses and high reliability in demanding industrial, automotive, and power management environments.

Key technical advantages include low drain-source resistance (Rds(on)) of 94 milliohms, which minimizes conduction losses, and low capacitances that optimize switching speed and efficiency at higher currents. The device features excellent gate oxide reliability and is compatible with standard gate drivers, simplifying integration into existing circuits.

The enhanced avalanche capability improves tolerance to voltage spikes, making this MOSFET suitable for robust industrial and commercial power electronics, including inverters, motor drives, and renewable energy systems.

Silicon carbide MOSFET technology for enhanced performance. 28 A continuous drain current and 650 V maximum drain-source voltage. Low on-resistance of 94 milliohms reduces power loss. Enhancement mode with 4-pin TO-247 through-hole package.

Outstanding thermal management for reliable operation. Compatible with standard MOSFET gate drivers. Increased avalanche capability for transient robustness.

This product is new and made in India standard manufacturing processes. It is ideal for semiconductor applications in industrial power electronics, automotive electronics, and other high-reliability domains. Explore more high-quality power MOSFETs and related components in the EnvMart Semiconductor category.