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Infineon CoolSiC N-Channel MOSFET 39A 650V Enhancement 3-Pin TO-247 IMW65R048M1HXKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Model | IMW65R048M1HXKSA1 |
| Mount Type | Through Hole |
| Series | CoolSiC |
| Package Type | TO-247 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 39A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 64mΩ |
| Channel Mode | Enhancement |
Key Features
- The device features an enhancement mode channel for superior switching performance.
- It incorporates silicon carbide technology for reduced losses and improved robustness.
- Optimized for low drain-source resistance of 64mΩ to ensure efficient conduction.
- Designed with excellent thermal behavior suitable for high-power applications.
- Offers superior gate oxide reliability for extended operational life.
- Compatible with standard drivers facilitating ease of implementation.
- Increased avalanche capability improves device durability under transient conditions.
- Through-hole mount TO-247 package provides mechanical stability and ease of assembly.
Product Description
Infineon IMW65R048M1HXKSA1 CoolSiC N-Channel MOSFET is a high-performance discrete semiconductor device engineered for demanding power electronics applications. It operates reliably with a maximum continuous drain current of 39A and a drain-source voltage rating of 650V, leveraging the benefits of silicon carbide (SiC) technology. Packaged in a TO-247 three-pin format, this MOSFET is suited for through-hole mounting in industrial and commercial power systems.
Silicon carbide technology enables the device to deliver lower conduction losses and improved switching speeds compared to conventional silicon MOSFETs. The enhancement mode channel ensures optimal control of the conduction state, while the low on-resistance of 64mΩ reduces energy dissipation under load. This results in enhanced efficiency, heat management, and operational reliability.
Designed with superior gate oxide reliability and excellent thermal performance, the IMW65R048M1HXKSA1 is well-suited for applications such as industrial motor drives, renewable energy inverters, power supplies, and electric vehicles. The device's increased avalanche capability further affirms its robustness under voltage transients, extending operational lifespan.
The device features an enhancement mode channel for superior switching performance. It incorporates silicon carbide technology for reduced losses and improved robustness. Optimized for low drain-source resistance of 64mΩ to ensure efficient conduction.
Designed with excellent thermal behavior suitable for high-power applications. Offers superior gate oxide reliability for extended operational life. Compatible with standard drivers facilitating ease of implementation. Increased avalanche capability improves device durability under transient conditions.
Through-hole mount TO-247 package provides mechanical stability and ease of assembly.
This MOSFET supports industrial power management applications, laboratory equipment, HVAC systems, manufacturing electronics, and automotive powertrain modules. Its robust design enhances device longevity and energy efficiency in demanding environments.
Explore our Electronics & Electricals section for more Infineon semiconductors tailored to power and signal management needs on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for the Infineon CoolSiC N-Channel MOSFET IMW65R048M1HXKSA1 is 39A.
This model has a maximum drain-source voltage rating of 650V.
The on-resistance of the IMW65R048M1HXKSA1 is optimized at 64mΩ, which ensures efficient conduction.
The device is designed for through-hole mounting, packaged in a TO-247 format.
This model features a pin count of 3.
The IMW65R048M1HXKSA1 features an N-channel type.
The channel mode of this MOSFET is enhancement, which allows for superior switching performance.
Silicon carbide technology reduces conduction losses and improves switching speeds compared to conventional silicon MOSFETs.
It is suitable for applications such as industrial motor drives, renewable energy inverters, power supplies, and electric vehicles.
The country of origin for the Infineon CoolSiC N-Channel MOSFET is India.
The device has increased avalanche capability, which improves its durability under transient conditions.
Yes, it is compatible with standard drivers, facilitating ease of implementation in various applications.
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