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STMicroelectronics 650V Silicon Carbide N-Channel Enhancement MOSFET, 116 A, 7-Pin H2PAK Package SCTH90N65G2V-7
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 10.4mm |
| Length | 15.25mm |
| Model | SCTH90N65G2V-7 |
| Width | 4.8mm |
| Mount Type | Surface |
| Series | SCTH90 |
| Maximum Operating Temperature | 175°C |
| Package Type | H2PAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 7 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 116A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 24mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 484W |
| Typical Gate Charge Qg @ Vgs | 157nC |
| Maximum Gate Source Voltage Vgs | 22V |
Key Features
- Offers a maximum continuous drain current of 116 A.
- Maximum drain-source voltage rating of 650 V for robust power handling.
- Low on-resistance drain-source of 24 milliohms ensuring efficient conduction.
- Maximum power dissipation rating of 484 W supports high energy workloads.
- Capable of operating at junction temperatures up to 175°C.
- Features extremely low gate charge of 157 nC minimizing switching losses.
- 7-Pin H2PAK surface mount package optimized for PCB layouts.
- Enhancement mode channel type with N-channel conduction.
Product Description
STMicroelectronics SCTH90N65G2V-7 is a 650 V silicon carbide N-channel enhancement mode MOSFET designed for advanced power management systems. Featuring a maximum continuous drain current of 116 A and a low drain-source resistance of 24 milliohms, this device enables highly efficient power conversion with minimal conduction losses.
The 7-pin H2PAK surface mount package offers compact footprint and excellent thermal performance, allowing operation at junction temperatures up to 175°C, making it suitable for demanding industrial and automotive environments. The MOSFET's extremely low gate charge and input capacitances contribute to superior switching speed and reduced switching losses, enhancing overall system efficiency.
This power MOSFET is ideal for applications including motor drives, photovoltaic inverters, power supplies, and electric vehicle powertrains. Its robust intrinsic body diode and high operating temperature capability support reliable operation under harsh conditions.
Maximum continuous drain current of 116 A. Drain-source voltage rating of 650 V. Low on-resistance of 24 milliohms reduces power loss. Power dissipation rated at 484 W. Operating temperature range from -55°C to +175°C. 7-Pin H2PAK package type.
Extremely low gate charge of 157 nC. Enhancement mode with N-channel conduction improves efficiency.
The device is suitable for use in industrial, automotive, and commercial power electronics systems combining high efficiency and reliability. STMicroelectronics' SCTH90N65G2V-7 is part of a series of high-performance Power MOSFETs designed to meet current and future power management challenges.
Explore the Electronics & Electricals category on EnvMart for additional power semiconductor devices and MOSFET solutions tailored to your specific industrial and commercial needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 116 A.
This MOSFET has a maximum drain-source voltage rating of 650 V.
The dimensions of the H2PAK package are 15.25 mm in length, 4.8 mm in width, and 10.4 mm in height.
The on-resistance (drain-source resistance) is 24 milliohms.
The maximum power dissipation rating for this unit is 484 W.
The operating temperature range is from -55°C to +175°C.
The typical gate charge for this model is 157 nC.
This model uses an enhancement mode N-channel type.
The maximum gate-source voltage for this MOSFET is 22 V.
This device is designed for surface mounting.
This MOSFET is suitable for applications including motor drives, photovoltaic inverters, power supplies, and electric vehicle powertrains.
This model features a robust intrinsic body diode, supporting reliable operation under harsh conditions.
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