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| Country of Origin | India |
|---|---|
| Diameter | 3.75mm |
| Brand | STMicroelectronics |
| Height | 9.3mm |
| Length | 10.4mm |
| Model | STTH1210DI |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | STTH1210 |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220F |
| Minimum Operating Temperature | -65°C |
| Standards/Approvals | RoHS |
| Pin Count | 2 |
| Maximum Continuous Forward Current If | 12A |
| Peak Reverse Repetitive Voltage Vrrm | 1kV |
| Diode Configuration | Single |
| Rectifier Type | Switching |
| Peak Reverse Current Ir | 10μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 80A |
| Maximum Forward Voltage Vf | 2V |
| Peak Reverse Recovery Time trr | 48ns |
| Infineon Silicon Diode, Single, 7.5 A, 2-Pin 650 V TO-220 IDV15E65D2XKSA1Brand | Infineon |
| Vishay 600V 12A, Silicon Junction Diode, 2-Pin TO-220F UGF12JT-E3/45Brand | Vishay |
STMicroelectronics STTH1210DI is a high-performance switching diode built for electronic components and power distribution systems. Featuring a robust TO-220F package and through-hole mount type, it is designed for industrial and commercial semiconductor applications.
This diode provides a maximum continuous forward current of 12 amps and a peak reverse repetitive voltage rating of 1 kV, suitable for high voltage switching circuits. The maximum forward voltage drop of 2 volts ensures energy-efficient operation while handling significant current loads.
Designed for durability, the diode operates over a wide temperature range from -65°C to 175°C, making it reliable in harsh environmental conditions. Its peak non-repetitive forward surge current rating of 80 amps offers resilience in transient surge events.
The fast switching capability is demonstrated by a peak reverse recovery time of 48 nanoseconds, ideal for high-frequency rectification and switching power supplies. With a single diode configuration and two-pin layout, it integrates easily into circuitry.
Through-hole mount with TO-220F package. Maximum forward current of 12 A. High reverse voltage resistance at 1 kV. Low forward voltage drop of 2 V for efficient operation. Peak reverse recovery time of 48 ns ensuring rapid switching.
Wide operating temperature range from -65°C to 175°C. Compact dimensions ideal for tight circuit board layouts. RoHS certified for environmental compliance. Peak reverse current limited to 10 μA for stable performance. Suitable for industrial, laboratory, and power electronics applications.
This diode from STMicroelectronics is a reliable option for users seeking efficient power switching components suitable for a variety of electronic systems including power supplies, industrial machinery, and advanced semiconductor device manufacturing.
Explore the full range of semiconductor products and Switching Diodes in the EnvMart catalog to find compatible components for your electronic projects.
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