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Taiwan Semiconductor Silicon Junction Switching Diode 3 A 400 V 2-Pin DO-214AA ES3G V7G

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Taiwan Semiconductor Silicon Junction Switching Diode 3 A 400 V 2-Pin DO-214AA ES3G V7G

Name: Taiwan Semiconductor Silicon Junction Switching Diode 3 A 400 V 2-Pin DO-214AA ES3G V7G
Brand: Taiwan Semiconductor
SKU: 372467
Price: 20.22 USD
Availability: InStock

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Category Switching Diodes Brand Taiwan Semiconductor Condition New

Specifications

Country of Origin	China
Brand	Taiwan Semiconductor
Height	2.62mm
Length	7.11mm
Model	ES3G V7G
Width	6.22mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	DO-214AA
Sub Type	Silicon Junction
Minimum Operating Temperature	-55°C
Pin Count	2
Diode Configuration	Single
Peak Non-Repetitive Forward Surge Current Ifsm	100A
Maximum Forward Voltage Vf	1.3V
Peak Reverse Recovery Time trr	35ns
Maximum Forward Current If	3A
Maximum Peak Reverse Repetitive Voltage Vrrm	400V
Taiwan Semi 400V 3A, Rectifier Diode, 2-Pin DO-214AB RS3GBrand	Taiwan Semiconductor

Key Features

Maximum forward current of 3 amperes for reliable performance.
Surface mount package type DO-214AA designed for PCB applications.
Peak reverse recovery time of 35 nanoseconds enabling fast switching.
Maximum peak reverse repetitive voltage rating of 400 volts.
Operating temperature range from -55°C to 150°C for durability in harsh conditions.
Maximum forward voltage of 1.3 volts ensuring efficient rectification.
Peak non-repetitive forward surge current capacity of 100 amperes.
Compact dimensions with length 7.11 mm, width 6.22 mm, and height 2.62 mm.

Product Description

Taiwan Semiconductor ES3G V7G silicon junction switching diode is designed to handle a maximum forward current of 3 amperes and a peak reverse repetitive voltage of 400 volts. Housed in a compact 2-pin DO-214AA surface mount package, it is suitable for power rectification and switching applications across diverse industrial electronic circuits.

This diode features a peak reverse recovery time (trr) of 35 nanoseconds, enabling efficient high-speed switching essential for power management systems. The maximum forward voltage drop of 1.3 V minimizes power dissipation, improving circuit efficiency.

The device operates reliably within a wide temperature range from -55°C to 150°C, making it suitable for demanding environmental conditions in industrial, manufacturing, and electronic equipment.

Its compact physical dimensions of 7.11 mm length, 6.22 mm width, and 2.62 mm height support low profile PCB designs, optimizing space for compact and lightweight assemblies. High maximum forward current of 3 A for robust electrical performance.

Low forward voltage drop enhances energy efficiency. Fast switching with 35 ns reverse recovery time. Wide operating temperature range supports harsh environments. Compact DO-214AA surface mount package for space-saving integration.

Peak surge current capacity allows handling momentary overloads. Manufactured in China with reliable quality control.

This silicon junction switching diode is ideally applied in power supplies, rectifiers, inverters, industrial automation, and general electronics requiring quick switching and reliable current conduction.

Explore more semiconductors and Switching Diodes from Taiwan Semiconductor on EnvMart to meet your electronic component requirements.