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onsemi Silicon Junction Switching Diode, Single, 1 A 1 kV DO-214AC RS1M

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onsemi Silicon Junction Switching Diode, Single, 1 A 1 kV DO-214AC RS1M

Name: onsemi Silicon Junction Switching Diode, Single, 1 A 1 kV DO-214AC RS1M
Brand: onsemi
SKU: 365069
Price: 0.11 USD
Availability: InStock

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Category Switching Diodes Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	2.2mm
Length	4.75mm
Model	RS1M
Width	2.95mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	DO-214AC
Sub Type	Silicon Junction
Minimum Operating Temperature	-55°C
Pin Count	2
Maximum Power Dissipation Pd	1.19W
Diode Configuration	Single
Peak Non-Repetitive Forward Surge Current Ifsm	30A
Maximum Forward Voltage Vf	1.3V
Peak Reverse Recovery Time trr	500ns
Maximum Forward Current If	1A
Maximum Peak Reverse Repetitive Voltage Vrrm	1kV

Key Features

This is a surface-mount diode with 2 pins for easy integration.
Maximum forward voltage is 1.3 V ensuring efficient conduction.
Supports high peak non-repetitive forward surge current of 30 A.
Rated for power dissipation of 1.19 W enabling reliable performance.
Operating temperature range from -55°C to 150°C suits harsh environments.
The device features a fast peak reverse recovery time of 500 ns, ideal for switching applications.
Compact dimensions of 4.75 mm length, 2.95 mm width, and 2.2 mm height facilitate PCB space savings.
Glass passivated junction and strain relief enhance durability and automated placement compatibility.

Product Description

onsemi RS1M is a single silicon junction switching diode designed for surface mount applications with a maximum forward current of 1 A and peak reverse voltage of 1 kV. Packaged in the DO-214AC form factor, it features a glass passivated junction and built-in strain relief which ensures high reliability and ease of automated PCB assembly.

This diode delivers a maximum forward voltage of 1.3 V and supports a peak non-repetitive forward surge current of up to 30 A, making it suitable for various power electronics and switching applications.

The device has a low peak reverse recovery time of 500 ns which enables efficient high-speed switching in electronic circuits. It is rated for continuous power dissipation of 1.19 W and can reliably operate within temperature limits from -55°C to 150°C, thus supporting use in industrial and commercial environments.

The compact physical dimensions of 4.75 mm length, 2.95 mm width, and 2.2 mm height allow for space-optimized PCB layouts. This diode does not carry automotive standards or certifications, thus best suited for general purpose semiconductor switching roles.

The RS1M from onsemi is ideal for applications in power supplies, inverters, converters, and other electronic devices requiring fast rectification and switching performance. Its DO-214AC packaging facilitates manual and automated assembly processes.

This silicon junction diode is surface-mounted with two pins and a DO-214AC package. Offers 1A forward current and 1 kV peak reverse voltage rating. Features 1.3V max forward voltage and 30A peak forward surge current. Continuous power dissipation is 1.19W ensuring robust operation.

Has a fast peak reverse recovery time of 500ns for switching efficiency. Can operate safely from -55°C up to 150°C ambient temperature. Compact size with 4.75 mm length, 2.95 mm width, and 2.2 mm height. Glass passivated junction and strain relief for durability and automated placement.

Suitable for industrial, electronic, and power supply switching applications. Explore more semiconductor Switching Diodes and electronic components on EnvMart for your industrial and electronic design needs.