Infineon Emitter Controlled Single Diode, 80 A, 650 V, 3-Pin TO-247 Package IDW80C65D1XKSA1

Infineon IDW80C65D1XKSA1 is an emitter controlled single diode configured in a common cathode arrangement, housed in a TO-247 package optimized for streamlined assembly and compact designs.

This diode supports a maximum forward current of 80 A and a maximum peak reverse repetitive voltage of 650 V, suitable for demanding power switching applications such as telecom systems, uninterruptible power supplies (UPS), welding equipment, adapters, household appliances, and air conditioning units.

The device offers a temperature-stable forward voltage of 1.35 V and has a high softness factor that minimizes electromagnetic interference, contributing to low EMI filtering performance. Its low reverse recovery charge and current make it ideal for switching frequencies between 18 kHz and 40 kHz.

Equipped with a 3-pin TO-247 through-hole package for secure mounting and thermal management. Maximum power dissipation rating of 179 W enhances durability in high load conditions. Peak reverse recovery time of 77 ns supports high-speed switching.

Operational temperature range of -40°C to 175°C enables use in extreme environments. Capable of peak surge currents up to 320 A for transient load resilience. Compact physical dimensions (16.13 x 5.21 x 41.42 mm) facilitate design integration.

Meets JEDEC standards for semiconductor quality and performance.

This diode is widely used across industrial, commercial, and residential electronic applications demanding efficient power control and switching characteristics. Its robust build and technical specifications ensure reliable operation in a variety of demanding environments.

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