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Infineon Silicon Diode Single 7.5 A 2-Pin TO-220 650 V High Temperature Power Diode IDV15E65D2XKSA1

Category Switching Diodes Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 16.15mm
Length 10.65mm
Model IDV15E65D2XKSA1
Width 4.85mm
Mount Type Through Hole
Maximum Operating Temperature 175°C
Package Type TO-220
Sub Type Silicon Junction
Minimum Operating Temperature -40°C
Pin Count 2
Maximum Power Dissipation Pd 34W
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 100A
Maximum Forward Voltage Vf 2.2V
Peak Reverse Recovery Time trr 51ns
Maximum Forward Current If 7.5A
Maximum Peak Reverse Repetitive Voltage Vrrm 650V

Key Features

  • The diode supports a maximum forward current of 7.5 A for reliable power conduction.
  • Maximum peak repetitive reverse voltage rating is 650 V ensuring high voltage tolerance.
  • Features a TO-220 through-hole package providing excellent heat dissipation.
  • Fast recovery time of 51 ns enables efficient operation in rapid switching circuits.
  • Maximum forward voltage drop of 2.2 V reduces power loss in operation.
  • Operational temperature range from -40°C to 175°C suits high temperature industrial environments.
  • Peak non-repetitive forward surge current rating up to 100 A supports transient current handling.
  • The diode is electrically isolated with a FullPAK design for easy and safe mounting.

Product Description

Infineon IDV15E65D2XKSA1 is a high-performance silicon diode configured as a single switching diode with a maximum continuous forward current of 7.5 A and a peak reverse voltage rating of 650 V. It is housed in a TO-220 package measuring 10.65 mm in length, 4.85 mm in width, and 16.15 mm in height, designed for through-hole mounting. Its robust construction and heat resistance make it ideal for demanding industrial, electronic, and power control applications.

This diode employs silicon junction technology and features a fast recovery time of 51 nanoseconds, making it suitable for rapid switching requirements in automated electronic circuits and industrial machinery. The maximum forward voltage of 2.2 V helps optimize circuit energy efficiency by minimizing power losses during conduction.

The operating temperature range from -40°C to 175°C allows it to reliably perform in environments with significant thermal stress. The casing provides electrical isolation and facilitates easy assembly with its FullPAK design. The diode also supports a non-repetitive surge current of up to 100 A, enabling it to withstand short transient overloads.

Applications include use as a boost diode in continuous current mode power factor correction, power factor correction circuits, switching power supplies, and integration in electrical devices requiring robust, high-temperature resistant diodes. Its compact TO-220 footprint ensures easy mounting and efficient heat dissipation, essential for maintaining performance in power electronics systems.

The diode supports a maximum forward current of 7.5 A for reliable operation. Maximum peak reverse voltage rating is 650 V for high voltage tolerance. Fast recovery time of 51 ns enables rapid switching efficiency. Designed in a TO-220 through-hole package for effective heat dissipation.

Maximum forward voltage drop of 2.2 V minimizes energy loss. Operational temperature from -40°C to 175°C suits harsh environments. Peak non-repetitive forward surge current rating of 100 A handles transient currents safely.

Applications include industrial power factor correction and automated electronic circuits. Explore EnvMart's Semiconductor and Switching Diode categories for compatible power components and related accessories.

Explore more products in our Switching Diodes category.

Infineon Silicon Diode Single 7.5 A 2-Pin TO-220 650 V High Temperature Power Diode IDV15E65D2XKSA1
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Frequently Asked Questions

The maximum forward current of the Infineon IDV15E65D2XKSA1 is 7.5 A.

This diode has a peak reverse voltage rating of 650 V, ensuring high voltage tolerance.

The diode features a fast recovery time of 51 nanoseconds, suitable for rapid switching applications.

The maximum forward voltage drop for this model is 2.2 V, which helps minimize power loss during operation.

It operates within a temperature range of -40°C to 175°C, making it suitable for high-temperature environments.

The diode is housed in a TO-220 package, designed for through-hole mounting and effective heat dissipation.

This diode supports a peak non-repetitive forward surge current rating of up to 100 A.

The dimensions of this diode are 10.65 mm in length, 4.85 mm in width, and 16.15 mm in height.

The maximum power dissipation for the Infineon IDV15E65D2XKSA1 is 34 W.

It is suitable for applications such as power factor correction, switching power supplies, and automated electronic circuits.

This model features a 2-pin configuration, facilitating easy integration into circuits.

The Infineon IDV15E65D2XKSA1 is configured as a single diode.

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