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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 16.15mm |
| Length | 10.65mm |
| Model | IDV15E65D2XKSA1 |
| Width | 4.85mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -40°C |
| Pin Count | 2 |
| Maximum Power Dissipation Pd | 34W |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A |
| Maximum Forward Voltage Vf | 2.2V |
| Peak Reverse Recovery Time trr | 51ns |
| Maximum Forward Current If | 7.5A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 650V |
| STMicroelectronics 1200 V 5 A Diode Switching 2-Pin TO-220AC STTH512DBrand | STMicroelectronics |
| IXYS 1200 V 11 A Diode Switching 2-Pin TO-220AC DSEI12-12ABrand | IXYS |
| Diode, rectifier, RUR860Brand | NEUTRAL |
Infineon IDV15E65D2XKSA1 silicon diode is a robust single silicon junction diode designed for power applications requiring reliable high-temperature and high-voltage performance. Packaged in a TO-220 through-hole configuration, it measures 10.65 mm in length, 4.85 mm in width, and 16.15 mm in height. This diode supports a maximum continuous forward current of 7.5 A and a maximum reverse repetitive voltage of 650 V, making it suitable for a broad range of industrial and electronic equipment.
The device features a peak reverse recovery time of 51 nanoseconds, allowing for rapid switching efficiency in power electronics. Its maximum forward voltage drop is 2.2 V, which helps improve overall circuit performance by reducing power losses. The diode is rated for a maximum operating temperature of 175°C and a minimum temperature of -40°C, allowing for use in challenging thermal environments.
Applications include use as a boost diode in continuous current mode power factor correction circuits, automated electronic controls, and integration within industrial machinery where heat resistance and switching speed are critical. The TO-220 package offers good thermal management and ease of mounting in power management assemblies.
High forward current capacity of 7.5 A ensures robust performance. 650 V maximum reverse voltage supports high-voltage operations. Fast recovery time optimizes switching efficiency in power electronics. Compact TO-220 package design supports heat dissipation and assembly convenience.
Designed for use in power factor correction and industrial automation equipment. Electrically isolated FullPAK configuration enhances safety during assembly.
This Infineon diode meets industry standards for discrete semiconductor power components. Suitable for use in electronic, industrial, and power control applications, it balances durability and efficiency. Explore more Infineon Switching Diodes and related semiconductor devices in the EnvMart catalog for comprehensive power electronics solutions.
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