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Infineon Silicon Diode Single 7.5 A Maximum Forward Current 650 V Reverse Voltage 2-Pin TO-220 IDV15E65D2XKSA1

Category Switching Diodes Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 16.15mm
Length 10.65mm
Model IDV15E65D2XKSA1
Width 4.85mm
Mount Type Through Hole
Maximum Operating Temperature 175°C
Package Type TO-220
Sub Type Silicon Junction
Minimum Operating Temperature -40°C
Pin Count 2
Maximum Power Dissipation Pd 34W
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 100A
Maximum Forward Voltage Vf 2.2V
Peak Reverse Recovery Time trr 51ns
Maximum Forward Current If 7.5A
Maximum Peak Reverse Repetitive Voltage Vrrm 650V
STMicroelectronics 1200 V 5 A Diode Switching 2-Pin TO-220AC STTH512DBrand STMicroelectronics
IXYS 1200 V 11 A Diode Switching 2-Pin TO-220AC DSEI12-12ABrand IXYS
Diode, rectifier, RUR860Brand NEUTRAL

Key Features

  • Designed for high-temperature operation from -40°C to 175°C.
  • Fast recovery time of 51 ns for efficient switching applications.
  • Maximum power dissipation rated at 34 W.
  • Compact TO-220 package enhances heat dissipation and mounting ease.
  • Low forward voltage drop of 2.2 V minimizes energy loss.
  • Ideal for use in industrial power factor correction and automated power control systems.
  • Electrically isolated FullPAK design for safe and reliable assembly.
  • Supports peak non-repetitive forward surge current up to 100 A.

Product Description

Infineon IDV15E65D2XKSA1 silicon diode is a robust single silicon junction diode designed for power applications requiring reliable high-temperature and high-voltage performance. Packaged in a TO-220 through-hole configuration, it measures 10.65 mm in length, 4.85 mm in width, and 16.15 mm in height. This diode supports a maximum continuous forward current of 7.5 A and a maximum reverse repetitive voltage of 650 V, making it suitable for a broad range of industrial and electronic equipment.

The device features a peak reverse recovery time of 51 nanoseconds, allowing for rapid switching efficiency in power electronics. Its maximum forward voltage drop is 2.2 V, which helps improve overall circuit performance by reducing power losses. The diode is rated for a maximum operating temperature of 175°C and a minimum temperature of -40°C, allowing for use in challenging thermal environments.

Applications include use as a boost diode in continuous current mode power factor correction circuits, automated electronic controls, and integration within industrial machinery where heat resistance and switching speed are critical. The TO-220 package offers good thermal management and ease of mounting in power management assemblies.

High forward current capacity of 7.5 A ensures robust performance. 650 V maximum reverse voltage supports high-voltage operations. Fast recovery time optimizes switching efficiency in power electronics. Compact TO-220 package design supports heat dissipation and assembly convenience.

Designed for use in power factor correction and industrial automation equipment. Electrically isolated FullPAK configuration enhances safety during assembly.

This Infineon diode meets industry standards for discrete semiconductor power components. Suitable for use in electronic, industrial, and power control applications, it balances durability and efficiency. Explore more Infineon Switching Diodes and related semiconductor devices in the EnvMart catalog for comprehensive power electronics solutions.

Infineon Silicon Diode Single 7.5 A Maximum Forward Current 650 V Reverse Voltage 2-Pin TO-220 IDV15E65D2XKSA1
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Frequently Asked Questions

The maximum forward current of the Infineon IDV15E65D2XKSA1 diode is 7.5 A.

This model has a maximum reverse repetitive voltage rating of 650 V.

The diode is packaged in a TO-220 configuration, which is a through-hole mount type.

The peak reverse recovery time is 51 nanoseconds, allowing for efficient switching applications.

The maximum power dissipation for the Infineon IDV15E65D2XKSA1 is rated at 34 W.

The diode measures 10.65 mm in length, 4.85 mm in width, and 16.15 mm in height.

The operating temperature range is from -40°C to 175°C.

The maximum forward voltage drop is 2.2 V, which helps minimize energy loss in circuits.

It is suitable for use in industrial power factor correction and automated power control systems.

The diode supports a peak non-repetitive forward surge current of up to 100 A.

The IDV15E65D2XKSA1 is a single diode configuration.

The country of origin for this diode is India.

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