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| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 6.71mm |
| Length | 14.4mm |
| Model | IRFBC40APBF |
| Width | 10.52mm |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220AB |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Number of Elements per Chip | 1 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 6.2A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 1.2Ω |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 42nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.5V |
| Transistor Configuration | Single |
Vishay IRFBC40APBF single 1 N-Channel Power MOSFET features a 6.2 A maximum continuous drain current and 600 V drain-source voltage rating in a durable 3-pin TO-220AB package, optimized for power switching applications. The device exhibits a low maximum drain-source resistance of 1.2 Ω at a gate-source voltage of 10 V, ensuring efficient conduction and reduced power losses. With a maximum power dissipation of 125 W, it offers effective heat management under demanding conditions.
Operating over a temperature range from -55°C to 150°C, the MOSFET is suitable for applications requiring reliable performance under varying environmental conditions. The maximum gate-source voltage of 30 V and a typical gate charge of 42 nC facilitate simple drive requirements and fast switching, contributing to enhanced efficiency.
This single transistor MOSFET, compliant with RoHS standards and lead (Pb) free, is designed to deliver long operational life without compromising performance. The TO-220AB package enables straightforward mounting and effective thermal dissipation, making it ideal for industrial, laboratory, and commercial electronics applications.
Common uses include high-speed power switching, switch mode power supplies (SMPS), and uninterruptible power supplies, where efficient and reliable power control is critical. The product is manufactured in China under stringent quality controls.
Maximum continuous drain current of 6.2 A ensures dependable power delivery. 600 V maximum drain-source voltage supports a wide range of electrical requirements. Low on-resistance reduces conduction losses. High power dissipation capability of 125 W enhances thermal handling.
Wide operating temperature range enables use in harsh environments. RoHS compliant and lead-free for environmentally responsible applications. Single transistor configuration for straightforward circuit integration. TO-220AB package supports efficient heat management and mounting.
Typical gate charge of 42 nC enables fast and efficient switching. Ideal for switch mode power supplies and power switching circuits.
Explore more high-quality MOSFETs and related semiconductor devices in the Electronics & Electricals category at EnvMart for your industrial and commercial electronic design needs.
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