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Vishay Single 1 N-Channel Power MOSFET 6.2 A 600 V 3-Pin TO-220AB IRFBC40APBF

Category Power MOSFET Brand Vishay Condition New

Specifications

Country of Origin China
Brand Vishay
Height 6.71mm
Length 14.4mm
Model IRFBC40APBF
Width 10.52mm
Maximum Operating Temperature 150°C
Package Type TO-220AB
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Number of Elements per Chip 1
Channel Type N
Maximum Continuous Drain Current Id 6.2A
Maximum Drain Source Voltage Vds 600V
Maximum Drain Source Resistance Rds 1.2Ω
Maximum Power Dissipation Pd 125W
Typical Gate Charge Qg @ Vgs 42nC
Maximum Gate Source Voltage Vgs 30V
Forward Voltage Vf 1.5V
Transistor Configuration Single

Key Features

  • Maximum continuous drain current of 6.2 A for reliable operation.
  • 600 V maximum drain-source voltage supports high voltage applications.
  • Low maximum drain-source resistance of 1.2 Ω at 10 V gate voltage ensures efficient conduction.
  • Maximum power dissipation rated at 125 W maintains thermal stability.
  • Gate-source voltage maximum rating of 30 V for driving compatibility.
  • Operates reliably in temperature range from -55°C to 150°C.
  • Typical gate charge of 42 nC optimizes switching performance.
  • 3-pin TO-220AB package facilitates easy mounting and cooling.

Product Description

Vishay IRFBC40APBF single 1 N-Channel Power MOSFET features a 6.2 A maximum continuous drain current and 600 V drain-source voltage rating in a durable 3-pin TO-220AB package, optimized for power switching applications. The device exhibits a low maximum drain-source resistance of 1.2 Ω at a gate-source voltage of 10 V, ensuring efficient conduction and reduced power losses. With a maximum power dissipation of 125 W, it offers effective heat management under demanding conditions.

Operating over a temperature range from -55°C to 150°C, the MOSFET is suitable for applications requiring reliable performance under varying environmental conditions. The maximum gate-source voltage of 30 V and a typical gate charge of 42 nC facilitate simple drive requirements and fast switching, contributing to enhanced efficiency.

This single transistor MOSFET, compliant with RoHS standards and lead (Pb) free, is designed to deliver long operational life without compromising performance. The TO-220AB package enables straightforward mounting and effective thermal dissipation, making it ideal for industrial, laboratory, and commercial electronics applications.

Common uses include high-speed power switching, switch mode power supplies (SMPS), and uninterruptible power supplies, where efficient and reliable power control is critical. The product is manufactured in China under stringent quality controls.

Maximum continuous drain current of 6.2 A ensures dependable power delivery. 600 V maximum drain-source voltage supports a wide range of electrical requirements. Low on-resistance reduces conduction losses. High power dissipation capability of 125 W enhances thermal handling.

Wide operating temperature range enables use in harsh environments. RoHS compliant and lead-free for environmentally responsible applications. Single transistor configuration for straightforward circuit integration. TO-220AB package supports efficient heat management and mounting.

Typical gate charge of 42 nC enables fast and efficient switching. Ideal for switch mode power supplies and power switching circuits.

Explore more high-quality MOSFETs and related semiconductor devices in the Electronics & Electricals category at EnvMart for your industrial and commercial electronic design needs.

Vishay Single 1 N-Channel Power MOSFET 6.2 A 600 V 3-Pin TO-220AB IRFBC40APBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 6.2 A, ensuring reliable operation in various applications.

This MOSFET has a maximum drain-source voltage rating of 600 V, making it suitable for high voltage applications.

The maximum power dissipation for this unit is rated at 125 W, which helps maintain thermal stability during operation.

The maximum gate-source voltage for this model is 30 V, which is important for driving compatibility.

The typical gate charge is 42 nC, optimizing its switching performance.

The dimensions of the TO-220AB package are 14.4 mm in length, 10.52 mm in width, and 6.71 mm in height.

This MOSFET operates reliably in a temperature range from -55°C to 150°C, suitable for harsh environments.

The maximum drain-source resistance at a 10 V gate voltage is 1.2 Ω, which ensures efficient conduction.

Yes, this model is RoHS compliant and lead-free, making it suitable for environmentally responsible applications.

This device features a single transistor configuration, facilitating straightforward circuit integration.

Common applications for this MOSFET include high-speed power switching, switch mode power supplies (SMPS), and uninterruptible power supplies.

This MOSFET is manufactured in China under stringent quality controls.

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