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onsemi N-Channel MOSFET Low RDS(on) 52A 40V Surface Mount 4-Pin LFPAK Package NTMYS7D3N04CLTWG
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.15mm |
| Length | 5mm |
| Model | NTMYS7D3N04CLTWG |
| Width | 4.25mm |
| Mount Type | Surface |
| Series | NTMYS7D3N04CL |
| Maximum Operating Temperature | 175°C |
| Package Type | LFPAK |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 52A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 12mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 38W |
| Typical Gate Charge Qg @ Vgs | 7nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- High continuous drain current rating of 52 amperes for robust performance.
- Operates at maximum drain-source voltage of 40 volts for low voltage switching.
- Low RDS(on) of 12 milliohms reducing conduction losses effectively.
- Compact 4-pin LFPAK surface mount package minimizing board space.
- Maximum power dissipation of 38 watts enables efficient heat management.
- Enhanced device with enhancement mode channel operation for reliable switching.
- Wide operating temperature range from -55°C to 175°C suitable for industrial use.
- Typical gate charge of 7 nanocoulombs ensuring fast switching response.
Product Description
onsemi NTMYS7D3N04CLTWG is a high-performance N-Channel MOSFET specifically engineered for industrial and electronic component applications requiring efficient power management and compact design.
This MOSFET supports a maximum continuous drain current of 52A and a maximum drain-source voltage of 40V, making it suitable for low voltage power switching tasks in various electronic circuits.
The device features a low drain-source resistance (RDS(on)) of 12mΩ, minimizing conduction losses and improving overall system efficiency. Packaged in a 4-pin LFPAK surface mount form factor measuring 5mm length, 4.25mm width, and 1.15mm height, it fits compact PCB layouts.
Its capability to dissipate 38W of power and operate within a wide temperature range from -55°C to 175°C provides robustness for demanding industrial environments.
Additional electrical characteristics include a typical gate charge of 7nC at the specified gate-source voltage, forward voltage of 1.2V, and a maximum gate-source voltage rating of 20V ensuring reliable gate drive operation.
This product is Pb-free and complies with environmental standards, making it suitable for environmentally conscious manufacturing processes. High continuous drain current rating of 52 amperes for robust performance. Operates at maximum drain-source voltage of 40 volts for low voltage switching.
Low RDS(on) of 12 milliohms reducing conduction losses effectively. Compact 4-pin LFPAK surface mount package minimizing board space. Maximum power dissipation of 38 watts enables efficient heat management. Enhanced device with enhancement mode channel operation for reliable switching.
Wide operating temperature range from -55°C to 175°C suitable for industrial use. Typical gate charge of 7 nanocoulombs ensuring fast switching response. This MOSFET is ideal for applications in power management, industrial controls, automotive electronics, and general-purpose switching in electronic equipment.
Explore the extensive range of semiconductors and Power MOSFETs at EnvMart for all your industrial and electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current of the NTMYS7D3N04CLTWG is 52A.
This model operates at a maximum drain-source voltage of 40V.
The NTMYS7D3N04CLTWG features a low RDS(on) of 12 milliohms.
The LFPAK package measures 5mm in length, 4.25mm in width, and 1.15mm in height.
It can dissipate a maximum power of 38 watts, allowing for efficient heat management.
The typical gate charge is 7 nanocoulombs at the specified gate-source voltage.
The operating temperature range is from -55°C to 175°C, making it suitable for industrial applications.
This device features an enhancement mode N-channel design.
The maximum gate-source voltage rating for this model is 20V.
It is suitable for applications in power management, industrial controls, automotive electronics, and general-purpose switching.
The forward voltage of the NTMYS7D3N04CLTWG is 1.2V.
This model has a pin count of 4.
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