Vishay Common Drain TrenchFET 3 Type P, Type N-Channel MOSFET, 30 A, 200 V Enhancement, 10-Pin Triple Die SQUN702E-T1_GE3

Vishay SQUN702E-T1_GE3 common drain TrenchFET is a triple die MOSFET device featuring 3 enhancement-mode P-channel and N-channel transistors combined in a compact 10-pin surface-mount package. It is engineered to handle heavy currents up to 30 A, with a maximum drain-source voltage rating of 200 V and maximum power dissipation of 60 W, making it ideal for power switching in high-voltage and high-current circuits.

The triple die configuration in a common drain topology provides flexible circuit integration with separate gate and source routing. This MOSFET device operates with a typical gate charge of 23 nC, supporting efficient switching energy management. The built-in body diode exhibits a forward voltage of 0.79 V, important for thermal considerations during reverse conduction events.

Rated for a wide operating temperature range of -55 °C to +175 °C, the SQUN702E-T1_GE3 meets rigorous automotive standards including AEC-Q101, ensuring superior reliability in demanding environments. Its surface-mount package and triple die design make it suitable for space-constrained applications such as automotive power distribution modules, high-voltage DC-DC conversion stages, motor driver half-bridge assemblies, compact surface-mount power supplies, and synchronous rectifier circuits used for efficiency improvements.

The device supports a maximum continuous drain current of 30 A for heavy load conditions. It features a maximum drain-source voltage rating of 200 V enabling high-voltage switching. Surface-mount triple die package with 10 pins facilitates compact and efficient PCB layouts.

Designed with a common drain configuration allowing specific routing of gate and source connections. The typical gate charge of 23 nC ensures predictable and efficient switching performance. Maximum power dissipation of 60 W supports sustained power delivery in demanding environments.

Forward voltage drop during body diode conduction is 0.79 V, impacting thermal and conduction losses. Operates reliably within a temperature range from -55 °C to +175 °C for harsh industrial applications. Includes automotive-grade AEC-Q101 standard qualification ensuring robust quality and reliability.

Compatible for use in automotive power distribution, DC-DC converters, motor drivers, synchronous rectifiers, and compact power supplies.

This MOSFET is highly regarded for industrial, automotive, electrical, and electronic applications where reliable power switching and thermal endurance are critical. Explore more Vishay MOSFETs and semiconductor components on EnvMart for your design and manufacturing needs.