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Vishay D N-Channel Power MOSFET, 20 A, 500 V Enhancement Mode, 3-Pin TO-247 IRFP460BPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 20.82mm |
| Length | 15.87mm |
| Model | IRFP460BPBF |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | D |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 250mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 278W |
| Typical Gate Charge Qg @ Vgs | 85nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
| - Low Figure-of-Merit (FOM) | Ron x Qg |
Key Features
- Operates in enhancement mode with low on-resistance for efficient performance.
- Designed with 3 pins compatible with through-hole mounting.
- Maximum power dissipation is 278 W, supporting high power applications.
- Typical gate charge 85 nC ensures fast switching capabilities.
- Wide temperature range from -55°C to 150°C allows operation in harsh environments.
- Low forward voltage of 1.2 V reduces conduction losses.
- Robust avalanche energy rating ensures durability under load surges.
Product Description
Vishay IRFP460BPBF is a high voltage, N-Channel D series Power MOSFET designed for power semiconductor applications requiring high efficiency and reliable performance. This enhancement mode MOSFET supports a maximum drain current of 20 A and withstands up to 500 V drain-source voltage, packaged in a standard 3-pin TO-247 form factor suitable for through-hole mounting.
The device features a low specific on-resistance and low input capacitance, minimizing capacitive switching losses, resulting in optimal efficiency. Its fast switching capabilities are aided by a typical gate charge of 85 nC at 8.5 V gate-source voltage. The MOSFET also provides high body diode ruggedness and avalanche energy rating, enhancing its durability in industrial, telecom, and power supply applications.
This Power MOSFET is ideal for use in consumer electronics such as LCD or plasma displays, server and telecom power supplies including SMPS, industrial applications like welding, induction heating, motor drives, and battery charging circuits. Its operating temperature range from -55°C to 150°C and forward voltage of 1.2 V allow for stable operation under diverse environmental and load conditions.
Mechanical dimensions - length 15.87 mm, width 5.31 mm, and height 20.82 mm - ensure compatibility with standard power electronics assemblies. Packaged in a patented efficient design, this device offers a low figure-of-merit (Ron x Qg), optimizing power loss and switching frequency trade-offs.
Operates at 20 A maximum continuous drain current and 500 V maximum drain-source voltage. 3-pin TO-247 package suitable for through-hole mounting applications. Low input capacitance and low on-resistance enhance switching efficiency.
High avalanche energy rating supports rugged operation in demanding environments. Wide ambient temperature range from -55°C to 150°C for versatile use. Fast switching supports power factor correction and switch mode power supplies.
Suitable for industrial, consumer electronics, telecom, and automotive applications. Explore more power semiconductors like this in EnvMart’s Electronics & Electricals category for semiconductor devices to meet your application needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 20 A.
It can withstand a maximum drain-source voltage of 500 V.
This model is packaged in a standard 3-pin TO-247 form factor suitable for through-hole mounting.
The typical gate charge is 85 nC at a gate-source voltage of 8.5 V.
The operating temperature range is from -55°C to 150°C.
The forward voltage is 1.2 V, which helps reduce conduction losses.
The dimensions are 15.87 mm in length, 5.31 mm in width, and 20.82 mm in height.
The maximum power dissipation is 278 W, supporting high power applications.
It has an N-channel configuration, designed for enhancement mode operation.
The maximum gate-source voltage is -20 V to +20 V.
This MOSFET is suitable for applications in consumer electronics, telecom power supplies, industrial applications, and battery charging circuits.
The low figure-of-merit (Ron x Qg) optimizes power loss and switching frequency trade-offs, enhancing overall efficiency.
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