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Infineon HEXFET N-Channel MOSFET 3.6 A 40 V Enhancement 3-Pin SOT-23 IRLML0040TRPBF

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Infineon HEXFET N-Channel MOSFET 3.6 A 40 V Enhancement 3-Pin SOT-23 IRLML0040TRPBF

Name: Infineon HEXFET N-Channel MOSFET 3.6 A 40 V Enhancement 3-Pin SOT-23 IRLML0040TRPBF
Brand: Infineon
SKU: 221822
Price: 0.18 USD
Availability: InStock

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Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	1.02mm
Length	3.04mm
Model	IRLML0040TRPBF
Width	1.4mm
Mount Type	Surface
Series	HEXFET
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	3.6A
Maximum Drain Source Voltage Vds	40V
Maximum Drain Source Resistance Rds	56mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	1.3W
Typical Gate Charge Qg @ Vgs	2.6nC
Maximum Gate Source Voltage Vgs	-16, +16V
Forward Voltage Vf	1.2V

Key Features

Low on-resistance of 56 milliohms minimizes conduction losses.
Supports continuous drain current up to 3.6 A for moderate load driving.
Maximum drain-source voltage rating of 40 V enables medium-voltage switching.
Typical gate charge of 2.6 nanocoulombs allows for faster switching speeds.
Power dissipation rating of 1.3 W supports thermal management in compact layouts.
Wide operating temperature range from -55°C to 150°C for demanding environments.
Compact SOT-23 surface-mount package with 3 pins ideal for space-constrained PCB designs.
Gate-source voltage tolerance of ±16 V provides robust gate drive margin.

Product Description

Infineon IRLML0040TRPBF is a HEXFET N-Channel MOSFET designed for compact, surface-mount power switching in electronic circuits. It features a maximum continuous drain current of 3.6 A and a drain-source voltage rating of 40 V, making it suitable for moderate load driving and medium-voltage switching applications.

The device is packaged in a 3-pin SOT-23 surface-mount form factor, supporting space-constrained SMT layouts where fast switching and efficient power transfer are essential. Its low on-resistance of 56 milliohms minimizes conduction losses, improving overall circuit efficiency.

With a typical gate charge of 2.6 nanocoulombs, it permits rapid switching speeds, beneficial in high-frequency applications such as DC-DC converters and battery-powered motor drivers. The MOSFET offers a power dissipation capacity of 1.3 W, facilitating effective thermal management in compact assemblies.

Engineered for robust operation, the IRLML0040TRPBF tolerates an extended temperature range from -55°C up to 150°C, allowing deployment in both cold and high-temperature environments. The gate-source voltage withstand capability of ±16 V further ensures reliable and safe gate driving under varied conditions.

This MOSFET is ideal for use in DC-DC converter switch stages, load switches in portable electronics, synchronous rectification in power supplies, and general-purpose switching tasks in control boards. The small footprint of the SOT-23 package enables efficient PCB layout and assembly in dense electronic designs.

Low on-resistance reduces conduction losses in switching circuits. 3.6 A continuous drain current supports moderate load applications. 40 V drain-source voltage rating suitable for medium-voltage switching. Fast switching enabled by low gate charge of 2.6 nC.

Power dissipation of 1.3 W helps maintain thermal stability. Wide operating temperature range from -55°C to 150°C. Compact SOT-23 package for space-saving PCB mounting. Gate-source voltage withstand of ±16 V ensures robust drive margin.

Forward voltage drop approximately 1.2 V for efficient conduction. Explore our comprehensive assortment of semiconductor components and enhance your electronic designs with reliable Infineon N-channel MOSFETs at EnvMart.