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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | FDD8447L |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 57A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 14mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 44W |
| Typical Gate Charge Qg @ Vgs | 37nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 800mV |
onsemi FDD8447L PowerTrench N-Channel MOSFET is a high-performance, surface-mount transistor featuring an enhancement mode N-channel designed for power management in diverse electronics applications.
With a maximum continuous drain current of 57 A and a drain-source voltage of 40 V, this MOSFET supports robust load conditions and offers excellent switching efficiency. The device has a low drain-source resistance (Rds) of 14 mΩ, significantly reducing conduction losses, which is critical in energy-efficient designs.
The TO-252 package type facilitates easy surface mounting and effective thermal dissipation, with physical dimensions of 6.73 mm length, 6.22 mm width, and 2.39 mm height. It supports a maximum power dissipation of 44 W, enabling it to handle demanding power loads without overheating.
The transistor operates reliably over a wide temperature range from -55°C to 150°C, making it suitable for harsh industrial and automotive environments. The typical gate charge of 37 nC at the specified gate voltage enables fast switching speeds, enhancing performance in high-frequency power circuits.
The device features a gate-source voltage rating from -20 V to +20 V, protecting it from voltage spikes and ensuring safe operation. Its forward voltage drop is low at 800 mV, helping to optimize overall circuit efficiency during conduction.
Maximum continuous drain current: 57 A. Drain-source voltage rating: 40 V. Enhancement mode, N-channel configuration. Maximum drain-source resistance: 14 mΩ. Maximum power dissipation: 44 W. Operating temperature range: -55°C to 150°C.
Typical gate charge: 37 nC at gate voltage. Gate-source voltage tolerance: -20 V to +20 V. Forward voltage drop: 800 mV. TO-252 surface mount package with compact dimensions. This MOSFET is widely used in industrial, automotive, power supply, and electronic control applications where efficient power switching and energy saving are essential.
Explore more onsemi MOSFETs and related semiconductor components with EnvMart's comprehensive industrial electronics selection.
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