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onsemi N-Channel MOSFET 2.4 A 30 V Enhancement Mode Surface Mount 3-Pin SOT-23 NTR4170NT1G
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 1.01mm |
| Length | 3.04mm |
| Model | NTR4170NT1G |
| Width | 1.4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2.4A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 110mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 480mW |
| Typical Gate Charge Qg @ Vgs | 4.76nC |
| Maximum Gate Source Voltage Vgs | 12V |
| Forward Voltage Vf | 1V |
Key Features
- Compact 3-pin SOT-23 package designed for surface mounting.
- Low drain-source on resistance of 110 milliohms minimizes conduction loss.
- Maximum power dissipation rated at 480 milliwatts for reliable thermal performance.
- Wide operating temperature range from -55°C to 150°C supporting harsh environments.
- Low typical gate charge of 4.76 nanocoulombs allowing efficient fast switching.
- Maximum gate-source voltage up to 12 V ensures robust gate drive compatibility.
- Forward voltage drop is approximately 1 V under normal operation conditions.
- Non-automotive grade device made in China reflecting standard industrial quality.
Product Description
onsemi NTR4170NT1G is an N-Channel enhancement mode MOSFET optimized for power switching and control applications. It offers a maximum continuous drain current of 2.4 amperes and a maximum drain to source voltage of 30 volts, making it suitable for low-voltage power converters and battery management systems.
Encapsulated in a small 3-pin SOT-23 surface mount package, this MOSFET features a low on-resistance of 110 milliohms, reducing conduction losses and improving power efficiency. The device also demonstrates a typical gate charge of only 4.76 nanocoulombs, which supports high-speed switching performance required in portable electronic applications.
Designed to operate reliably in a broad temperature range from -55°C up to 150°C, it is well suited for industrial and commercial electronics requiring thermal stability. Its maximum power dissipation is 480 milliwatts, providing design margin for moderate load applications.
The forward voltage drop of 1 volt and maximum gate-source voltage of 12 volts allow for flexible gate drive control. With compact physical dimensions (3.04 mm length, 1.4 mm width, 1.01 mm height), it fits tightly into dense printed circuit board layouts and supports surface mount manufacturing processes.
The product is manufactured in China and does not have automotive-grade certification, targeting general industrial, electronics component assembly, and power management applications.
Compact form factor with standard SOT-23 footprint. Efficient low resistance to minimize power loss in switching. Wide temperature tolerance for industrial operating conditions. Optimized gate charge for fast switching speeds.
Reliable power capability with moderate dissipation rating.
Ideal uses include power converters, battery management, load switching, and low voltage power electronics in industrial and consumer devices. Explore our extensive catalog and find additional semiconductor and MOSFET solutions tailored for your design needs on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.4 amperes.
It has a maximum drain-source voltage of 30 volts.
The on-resistance is rated at 110 milliohms, which helps minimize conduction losses.
The typical gate charge is 4.76 nanocoulombs, allowing for efficient fast switching.
It operates within a temperature range of -55°C to 150°C, making it suitable for harsh environments.
The maximum power dissipation is rated at 480 milliwatts.
The dimensions are 3.04 mm in length, 1.4 mm in width, and 1.01 mm in height.
It is encapsulated in a compact 3-pin SOT-23 surface mount package.
The maximum gate-source voltage is up to 12 volts, ensuring robust gate drive compatibility.
It is suitable for low-voltage power converters, battery management systems, and load switching applications.
This model is manufactured in China.
The forward voltage drop is approximately 1 volt under normal operating conditions.
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