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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.5mm |
| Length | 4.95mm |
| Model | DMP2040USD-13 |
| Width | 3.9mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SO-8 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | J-STD-020, AEC-Q101, RoHS, UL 94V-0, MIL-STD-202 |
| Pin Count | 8 |
| Number of Elements per Chip | 1 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 6.5A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 52mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.6W |
| Typical Gate Charge Qg @ Vgs | 8.6nC |
| Maximum Gate Source Voltage Vgs | 12V |
| Forward Voltage Vf | -7V |
| Transistor Configuration | Single |
DiodesZetex DMP2040USD-13 is a high-performance single type P-Channel power MOSFET designed for efficient power management in electronic circuits. Encapsulated in a compact 8-pin SO-8 surface mount package, this MOSFET supports a maximum continuous drain current of 6.5 A and a maximum drain-source voltage of 20 V, making it suitable for a wide array of power switching applications.
This device operates in enhancement mode, featuring low on-state resistance of 52 milliohms that minimizes conduction losses and supports fast switching with a typical gate charge of 8.6 nC at a gate-source voltage of 8 V. It also boasts a low gate threshold voltage and low input/output leakage currents, enhancing overall efficiency and reliability.
The MOSFET’s operating temperature range spans from -55°C to +150°C, allowing robust performance across demanding industrial and commercial environments. With a maximum power dissipation rating of 1.6 W, it effectively manages thermal limits under typical load conditions.
Constructed as a fully lead-free and environmentally friendly “Green” device, the DMP2040USD-13 complies with stringent standards including RoHS, J-STD-020, AEC-Q101, UL 94V-0 flammability rating, and MIL-STD-202 for reliability testing. It is ideal for applications such as backlighting, power management functions, and DC-DC converters in industrial and consumer electronics.
The MOSFET’s package dimensions are 4.95 mm length, 3.9 mm width, and 1.5 mm height, providing a compact form factor for dense PCBs. This product is manufactured in China and features a single-element transistor configuration designed for ease of circuit integration.
Designed for high efficiency power management applications. Low on-resistance and fast switching speed improve performance. Enhancement mode P-channel transistor with low gate threshold voltage. Surface mount SO-8 package with 8 pins for compact integration.
Wide operating temperature range from -55°C to +150°C. Maximum power dissipation of 1.6 W suitable for various electronic circuits. Totally lead-free and halogen and antimony-free “Green” device. Typical gate charge of 8.6 nanocoulombs enhances switching speed.
Low input/output leakage currents ensure energy efficiency. Complies with industry standards including RoHS, J-STD-020, AEC-Q101, and MIL-STD-202.
This Power MOSFET is a reliable choice for industrial, automotive (non-certified for automotive standard), laboratory, and consumer electronics applications requiring precision power switching. Explore the full range of semiconductor devices at EnvMart for your electronic component needs.
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