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Vishay N-Channel Power MOSFET 1.4 A 800 V TO-220FP IRFIBE20GPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Model | IRFIBE20GPBF |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220FP |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Number of Elements per Chip | 1 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 1.4A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 6.5Ω |
| Maximum Power Dissipation Pd | 30W |
| Typical Gate Charge Qg @ Vgs | 38nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- High voltage isolation with 2.5 kVrms rating for enhanced safety.
- Drain-source resistance of 6.5 ohms at 10 V gate voltage ensures efficient conduction.
- Maximum power dissipation of 30 W supports robust circuit applications.
- Wide operating temperature range from -55°C to 150°C for reliability in harsh environments.
- Typical gate charge of 38 nC at 10 V gate voltage enables fast switching.
- Isolated TO-220 FULLPAK package with 4.8 mm creepage distance for improved insulation.
- Single element design without automotive standards, suited for general power electronics use.
- Manufactured in China adhering to RoHS compliance standards.
Product Description
Vishay IRFIBE20GPBF is a robust N-Channel Power MOSFET designed for power electronics applications requiring high voltage and moderate current handling capability. It offers a maximum continuous drain current of 1.4 A and a drain-source voltage rating of 800 V, suitable for switching and amplification circuits.
This device is packaged in a TO-220 FULLPAK isolated package, providing high voltage isolation of 2.5 kVrms and a creepage distance of 4.8 mm between sink and leads, enhancing safety in industrial and electronic designs where isolation is critical.
The low drain-source on-resistance of 6.5 ohms at 10 V gate drive allows efficient conduction, reducing heat dissipation and improving system efficiency. It can dissipate up to 30 W of power, enabling it to handle demanding power loads in industrial and laboratory equipment.
The MOSFET supports a gate to source voltage maximum of 20 V and operates reliably over a wide temperature range from -55°C to 150°C, ensuring durability in various environments including automotive, industrial, and commercial electronics.
This discrete semiconductor is compliant with RoHS standards, reflecting environmental safety considerations. While it lacks automotive standard certifications, its rugged design is suitable for general industrial electronics, power supplies, and switching applications.
High voltage isolation rating of 2.5 kVrms enhances device safety. Low on-resistance of 6.5 Ω minimizes conduction losses. 30 W maximum power dissipation supports sustained operation under load. Wide temperature range ensures device stability in harsh conditions.
38 nC typical gate charge allows swift switching performance. TO-220 FULLPAK isolated package improves thermal and electrical performance. Single chip element design with N-channel type for efficient power management. Manufactured in China, RoHS compliant for environmental standards.
This Vishay Power MOSFET is ideal for electronic component needs in power management, industrial automation, and consumer electronics sectors. Explore related power semiconductor products and ensure optimized performance in your electrical designs with EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this model is 1.4 A.
It has a drain-source voltage rating of 800 V.
The maximum power dissipation is 30 W, allowing it to handle demanding power loads.
The typical gate charge at a 10 V gate voltage is 38 nC.
It operates reliably over a wide temperature range from -55°C to 150°C.
The drain-source on-resistance is 6.5 ohms at a 10 V gate drive.
It is packaged in a TO-220 FULLPAK isolated package.
The maximum gate-source voltage is 20 V.
Yes, this device is compliant with RoHS standards.
The creepage distance is 4.8 mm between the sink and leads.
It is suitable for general power electronics applications, including switching and amplification circuits.
This model is manufactured in China.
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