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Vishay N-Channel Power MOSFET 2.4 A 500 V IPAK Surface Mount 3-Pin IRFU420PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | IRFU420PBF |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | IRFU420 |
| Maximum Operating Temperature | 150°C |
| Package Type | IPAK |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 2.4A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 3Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 42W |
| Typical Gate Charge Qg @ Vgs | 19nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.6V |
Key Features
- Enhancement mode N-channel MOSFET designed for power switching and control.
- Maximum continuous drain current of 2.4 A supports moderate load demands.
- High drain-to-source voltage of 500 V enables high-voltage applications.
- Surface mount IPAK package with 3 pins ensures easy PCB assembly.
- Typical gate charge of 19 nC allows efficient switching performance.
- Maximum power dissipation of 42 W supports effective thermal management.
- Operating temperature range from -55°C to 150°C for wide thermal environments.
- Maximum gate source voltage tolerance ±20 V enables flexible drive voltages.
Product Description
Vishay IRFU420PBF is a high-voltage N-channel enhancement-mode power MOSFET designed to efficiently control power in demanding electronic systems. It operates with a maximum continuous drain current of 2.4 A and a maximum drain-source voltage of 500 V, making it suitable for applications that require both moderate current handling and high voltage blocking capability.
The device is supplied in an IPAK surface mount package with three pins, facilitating easy assembly on printed circuit boards. It features a maximum power dissipation of 42 W, permitting substantial thermal throughput for reliable operation in elevated temperature environments. The typical gate charge of 19 nC at the gate-source voltage ensures predictable switching performance, vital for efficient power management circuits.
Operating across a wide temperature range from -55°C to 150°C, the IRFU420PBF withstands harsh thermal conditions encountered in industrial and electrical systems. The device offers a maximum gate-source voltage of ±20 V, allowing for flexible gate drive voltage options. Its forward voltage of 1.6 V influences conduction losses in low-voltage operations.
This component is RoHS-compliant, adhering to environmental safety standards. While not certified for automotive standards, it is ideal for high-voltage power supply switching stages, industrial motor drive gates, DC-DC converters, electronic load and protection circuits, as well as switch-mode power supply (SMPS) and power management modules.
Enhancement mode N-channel MOSFET designed for power switching and control. Maximum continuous drain current of 2.4 A supports moderate load demands. High drain-to-source voltage of 500 V enables high-voltage applications.
Surface mount IPAK package with 3 pins ensures easy PCB assembly. Typical gate charge of 19 nC allows efficient switching performance. Maximum power dissipation of 42 W supports effective thermal management. Operating temperature range from -55°C to 150°C for wide thermal environments.
Maximum gate source voltage tolerance ±20 V enables flexible drive voltages. RoHS compliant for environmental safety. Forward voltage of 1.6 V affects conduction characteristics in low-voltage operation. Explore EnvMart for a wide range of semiconductor devices and Power MOSFETs from leading brands including Vishay.
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Frequently Asked Questions
The maximum continuous drain current for this model is 2.4 A, making it suitable for moderate load demands.
It has a maximum drain-source voltage of 500 V, enabling its use in high-voltage applications.
The typical gate charge is 19 nC at the gate-source voltage, which allows for efficient switching performance.
This model has a height of 2.39 mm, a length of 6.73 mm, and a width of 6.22 mm.
The maximum power dissipation is 42 W, supporting effective thermal management during operation.
It operates within a temperature range from -55°C to 150°C, suitable for various thermal environments.
This model is supplied in an IPAK surface mount package with three pins, facilitating easy PCB assembly.
The maximum gate-source voltage tolerance is ±20 V, allowing for flexible drive voltage options.
Yes, this component is RoHS compliant, adhering to environmental safety standards.
The forward voltage for this model is 1.6 V, which affects conduction characteristics in low-voltage operations.
It features an N-channel type, which is designed for enhancement mode operation in power switching applications.
This MOSFET is ideal for high-voltage power supply switching stages, industrial motor drive gates, and DC-DC converters.
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