Vishay N-Channel Power MOSFET 2.2 A 600 V Through Hole Surface Mount 3-Pin IRFBC20SPBF

Vishay IRFBC20SPBF is a robust N-channel power MOSFET designed for high voltage switching applications. It supports a maximum continuous drain current of 2.2 A and a drain-source voltage rating of 600 V, making it ideal for various electronic and power management circuits.

This device features a through hole and surface mount compatible package with 3 pins, suitable for versatile assembly options. The device showcases a low drain-source resistance of 4.4 ohms at a gate-source voltage of 10 V, which contributes to improved efficiency by minimizing conduction losses.

With a typical gate charge of 18 nC at a gate-source voltage of 20 V, the MOSFET achieves fast switching speeds, enhancing the performance in power switching applications. It dissipates a maximum power of 3.1 W ensuring operation under moderate power stresses.

The IRFBC20SPBF operates efficiently in a wide temperature range from -55°C up to 150°C, enabling use in harsh environmental conditions. It is a single transistor device that is fully avalanche rated, providing resilience against voltage spikes and transient conditions, further increasing reliability.

This MOSFET adheres to international standards including IEC 61249-2-21 and the RoHS 2002/95/EC directive for hazardous substances, ensuring compliance with environmental and safety regulations.

Primarily manufactured in China by Vishay, this power MOSFET is suited for industrial, electronic component manufacturing, power supply regulation, and semiconductor discrete device applications.

Features a low drain-source resistance of 4.4 ohms at 10 V gate-source voltage. Designed for through hole and surface mount applications with 3-pin configuration. Typical gate charge of 18 nC ensures efficient switching performance.

Supports a maximum power dissipation of 3.1 W for robust usage. Operates under a maximum gate-source voltage of 20 V and a forward voltage of 1.6 V. Functions reliably across a temperature range from -55°C to 150°C. Single transistor configuration making it suitable for discrete semiconductor applications.

Fully avalanche rated with a dynamic dV/dt rating for durability. RoHS compliant and meets IEC 61249-2-21 standards ensuring environmental adherence. Manufactured in China with a high-quality Vishay build. Explore a wide range of Power MOSFETs and semiconductor devices available on EnvMart for your electronic and industrial applications.