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Vishay N-Channel Power MOSFET 16 A 500 V TO-220AB IRFB17N50LPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Model | IRFB17N50LPBF |
| Mount Type | Screw |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220AB |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS 2002/95/EC |
| Number of Elements per Chip | 1 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 16A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 0.32Ω |
| Maximum Power Dissipation Pd | 220W |
| Typical Gate Charge Qg @ Vgs | 130nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Transistor Configuration | Single |
Key Features
- Power MOSFET designed for efficient switching applications.
- Maximum drain-source resistance of 0.32 ohms for low conduction losses.
- Supports gate-source voltage up to 30 V allowing flexible control.
- High maximum power dissipation of 220 W enabling robust operation.
- Operates between -55°C and 150°C for broad environmental compatibility.
- Single transistor configuration with one element per chip.
- Compliant with RoHS 2002/95/EC for environmental safety.
- Screw mount type facilitates reliable mechanical fixing and heat dissipation.
Product Description
Vishay IRFB17N50LPBF is a reliable N-channel power MOSFET engineered to handle demanding electrical and industrial applications requiring durable and high-performance semiconductor devices. Featuring a maximum continuous drain current of 16 A and a drain to source voltage rating of 500 V, it supports heavy power loads with excellent efficiency and thermal stability in the TO-220AB package type.
This device exhibits a low drain-source resistance of 0.32 ohms, resulting in reduced conduction losses and improved energy efficiency. It is designed for operation over wide temperature ranges from -55°C to a maximum of 150°C, making it suitable for harsh environmental conditions in industrial, power management, uninterruptible power supplies (UPS), and motor control equipment.
The maximum gate-source voltage of 30 V allows effective drive voltage margin for switching. The typical gate charge of 130 nC ensures swift switching speeds which optimize circuit performance and reduce switching losses. Its single transistor configuration simplifies circuit design and integration.
Manufactured in China, this MOSFET meets RoHS 2002/95/EC standards, reflecting its compliance with environmental and safety regulations. The screw mountable TO-220AB package facilitates convenient attachment to heatsinks and mechanical assemblies for thermal management.
Applications include industrial power supplies, automotive electronics, motor drives, power inverters, and other power conversion and switching operations requiring reliable MOSFET performance.
Power MOSFET designed for efficient switching applications. Maximum drain-source resistance of 0.32 ohms for low conduction losses. Supports gate-source voltage up to 30 V allowing flexible control. High maximum power dissipation of 220 W enabling robust operation.
Operates between -55°C and 150°C for broad environmental compatibility. Single transistor configuration with one element per chip. Compliant with RoHS 2002/95/EC for environmental safety. Screw mount type facilitates reliable mechanical fixing and heat dissipation.
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Frequently Asked Questions
The maximum continuous drain current of this model is 16 A.
It has a maximum drain-source voltage rating of 500 V.
The maximum power dissipation is 220 W, enabling robust operation.
The maximum drain-source resistance is 0.32 ohms, which helps reduce conduction losses.
This model operates between -55°C and 150°C, making it suitable for various environmental conditions.
The typical gate charge is 130 nC, which contributes to swift switching speeds.
It supports a maximum gate-source voltage of 30 V, allowing for flexible control.
This model features a screw mount type, facilitating reliable mechanical fixing and heat dissipation.
The package type is TO-220AB, which is commonly used for power devices.
This MOSFET has a single transistor configuration with one element per chip.
It is compliant with RoHS 2002/95/EC for environmental safety.
This device is suitable for applications such as industrial power supplies, automotive electronics, and motor drives.
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