$3.17
$3.08
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Vishay N-Channel MOSFET, Enhancement Mode, 7.8 A Continuous Drain Current, 800 V Drain Source Voltage, TO-247 IRFPE50PBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 20.7mm |
| Length | 15.87mm |
| Model | IRFPE50PBF |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | IRFP |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 7.8A |
| Maximum Drain Source Voltage Vds | 800V |
| Maximum Drain Source Resistance Rds | 1.2Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 190W |
| Typical Gate Charge Qg @ Vgs | 200nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.8V |
| N-channel MOSFET,IRFPE50 7.8A 600VBrand | Vishay |
Key Features
- High current handling capability of 7.8 A for efficient power management.
- Maximum drain-source voltage rating of 800 V for high voltage applications.
- Enhancement mode channel type providing reliable switching performance.
- Compact TO-247 3-pin package suitable for through-hole mounting.
- Maximum power dissipation rating of 190 W supporting robust operation.
- Low maximum drain-source resistance of 1.2 ohms minimizing conduction losses.
- Wide operating temperature range from -55°C to 150°C ensuring durability.
- Typical gate charge of 200 nC enabling fast switching speeds.
Product Description
Vishay IRFPE50PBF is a high-performance N-Channel Enhancement Mode MOSFET designed for efficient power switching and control. It supports a maximum continuous drain current of 7.8 A and a maximum drain-source voltage of 800 V, making it suitable for demanding industrial and electronic applications.
This MOSFET is housed in a durable TO-247 3-pin package facilitating reliable through-hole mounting. The device features a low maximum drain-source resistance of 1.2 ohms which helps reduce conduction losses and improves power efficiency. It operates effectively over a broad temperature range from -55°C up to 150°C, ensuring stable performance under harsh environmental conditions.
With a maximum power dissipation rating of 190 W, this component can handle significant thermal loads typical in power electronics, motor control, and industrial switching. The typical gate charge of 200 nC allows for rapid switching, beneficial in high-frequency operations. Its forward voltage of 1.8 V supports efficient conduction.
This device finds extensive use in industrial, laboratory, manufacturing, and HVAC control systems requiring robust semiconductor switching solutions. The TO-247 package facilitates easy integration into printed circuit boards and power modules.
High current handling capability of 7.8 A for efficient power management. Maximum drain-source voltage rating of 800 V for high voltage applications. Enhancement mode channel type providing reliable switching performance.
Compact TO-247 3-pin package suitable for through-hole mounting. Maximum power dissipation rating of 190 W supporting robust operation. Low maximum drain-source resistance of 1.2 ohms minimizing conduction losses. Wide operating temperature range from -55°C to 150°C ensuring durability.
Typical gate charge of 200 nC enabling fast switching speeds. Forward voltage of 1.8 V for efficient conduction characteristics. Explore the Vishay MOSFET range on EnvMart for advanced semiconductor components tailored to your industrial and electronic design needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 7.8 A.
This MOSFET has a maximum drain-source voltage rating of 800 V.
It is housed in a TO-247 package, suitable for through-hole mounting.
The maximum power dissipation rating for this unit is 190 W.
It operates effectively over a wide temperature range from -55°C to 150°C.
The maximum drain-source resistance is 1.2 ohms, which helps minimize conduction losses.
The typical gate charge is 200 nC, enabling fast switching speeds.
The forward voltage is 1.8 V, supporting efficient conduction characteristics.
This MOSFET has a pin count of 3.
It utilizes an N-channel type for enhancement mode operation.
The maximum gate-source voltage is -20V to +20V.
This model is suitable for industrial, laboratory, manufacturing, and HVAC control systems requiring robust semiconductor switching solutions.
Related Products
Other Products from this brand
$1.99
$1.93
-3%
New
$1.69
$1.64
-3%
New
$1.82
$1.77
-3%
New
$1.54
$1.50
-3%
New
$0.30
$0.29
-3%
New
Recently Viewed Products
$9.10
$8.82
-3%
New
$55.51
$53.84
-3%
New
$26.32
$25.53
-3%
New
$3.17
$3.08
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent