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onsemi N-Channel MOSFET 14 A 650 V Enhancement Surface Mount TO-263 3-Pin FCB199N65S3

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onsemi N-Channel MOSFET 14 A 650 V Enhancement Surface Mount TO-263 3-Pin FCB199N65S3

Name: onsemi N-Channel MOSFET 14 A 650 V Enhancement Surface Mount TO-263 3-Pin FCB199N65S3
Brand: onsemi
SKU: 151076
Price: 3.13 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	China
Brand	onsemi
Height	4.83mm
Length	10.67mm
Model	FCB199N65S3
Width	9.65mm
Mount Type	Surface
Series	FCB
Maximum Operating Temperature	150°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	14A
Maximum Drain Source Voltage Vds	650V
Maximum Drain Source Resistance Rds	199mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	98W
Typical Gate Charge Qg @ Vgs	30nC
Maximum Gate Source Voltage Vgs	30V
Forward Voltage Vf	1.2V
Internal Gate Resistance	7.0 ohm

Key Features

Supports a continuous drain current of 14 amperes for reliable performance.
Maximum drain-to-source voltage rating of 650 volts enables high voltage applications.
Features low on-resistance of 199 milliohms for efficient conduction.
Capable of dissipating up to 98 watts of power ensuring robust thermal handling.
Gate-to-source voltage maximum rating of 30 volts supports stable gate control.
Operates over a wide temperature range from -55°C to 150°C for versatility.
Compact dimensions of 10.67 mm length, 9.65 mm width, and 4.83 mm height optimize PCB space.
Internal gate resistance of 7 ohms reduces switching oscillations and enhances performance.

Product Description

onsemi FCB199N65S3 is a 3-pin N-Channel MOSFET designed for surface mount applications using the TO-263 package. It provides a continuous drain current rating of 14 A and a maximum drain-source voltage of 650 V, suitable for demanding power management circuits in industrial, commercial, and automotive electronics. This enhancement mode device utilizes SuperFET III technology to achieve low on-resistance (199 mΩ) and ultra-low gate charge, minimizing conduction and switching losses for higher system efficiency.

The MOSFET supports a maximum power dissipation of 98 W, operating reliably across a wide temperature range from -55°C to 150°C. Its compact package dimensions (10.67 mm × 9.65 mm × 4.83 mm) enable miniaturization without sacrificing thermal performance. Internal gate resistance of 7 ohms helps to suppress voltage oscillations during switching events, improving electromagnetic compatibility.

Typical gate charge is 30 nC at 30 V gate-source voltage, optimizing switching speed while lowering losses. The forward voltage drop of 1.2 V contributes to overall efficiency in high-frequency circuits. Manufactured in China, the FCB199N65S3 is well suited for power system applications including DC-DC converters, motor drives, and power supplies requiring superior switching and conduction characteristics.

Continuous drain current of 14 A for reliable current handling. 650 V maximum drain-source voltage rating for high voltage systems. Low on-resistance of 199 milliohms to reduce conduction losses. 98 W maximum power dissipation for robust operation.

Wide operating temperature range from -55°C to 150°C. Compact TO-263 surface mount package for space-constrained designs. Internal gate resistance of 7 ohms for reduced switching noise. Typical gate charge of 30 nC ensures efficient switching.

Forward voltage of 1.2 V supports low drop operation. SuperFET III technology provides enhanced performance and reliability.

This MOSFET is ideal for industrial, laboratory, manufacturing, commercial, and automotive applications requiring efficient power switching and miniaturization. For more products with similar specifications and applications, explore the MOSFET category on EnvMart.