Infineon Bipolar Transistor NPN 35 mA 2.25 V 4-Pin TSFP BFP840FESDH6327XTSA1

Infineon BFP840FESDH6327XTSA1 is a high-performance bipolar junction transistor (BJT) with an NPN configuration, designed primarily for wireless applications operating in the 5-6 GHz range. This device employs reliable and advanced SiGe:C heterojunction bipolar transistor technology, known for its excellent input/output power matching and noise characteristics, ideal for WiFi systems. Operating at a maximum DC collector current of 35 mA and a collector emitter voltage of 2.25 V, it ensures efficient amplification with low power consumption.

The transistor comes in a 4-pin TSFP surface mount package, facilitating compact and high-density circuit board layouts. It supports a maximum power dissipation of 75 mW and a maximum transition frequency (ft) of 85 GHz, making it suitable for high-frequency RF applications. Designed to operate in temperatures ranging from -55°C to 150°C, the component is robust and reliable across harsh industrial conditions.

Its integrated electrostatic discharge (ESD) protection up to 2 kV human body model (HBM) ensures device longevity and resilience in demanding environments. The transistor delivers a high gain with a minimum DC current gain (hFE) of 150 and maintains a low noise figure, optimizing system sensitivity and performance. Compact design dimensions, including a length of 1.4 mm, width of 0.8 mm, and height of 0.55 mm, make it ideal for space-constrained electronic assemblies.

Additional features include an accurate SPICE general purpose model enabling precise circuit simulation and design verification. This transistor is widely applicable in industrial, telecommunications, and consumer wireless equipment manufacturing, providing a reliable component for high-frequency signal amplification.

High-performance SiGe:C HBT for WiFi frequency bands. ESD robustness rated at 2 kV HBM. Maximum RF input power of 21 dBm. Wide operating temperature range from -55°C to 150°C. Compact 4-pin TSFP surface mount package. Low noise figure and high gain characteristics.

Maximum power dissipation of 75 mW. Maximum transition frequency of 85 GHz. Accurate SPICE model for design optimization. Suitable for industrial and communication applications.

Choose this Infineon BFP840FESDH6327XTSA1 bipolar transistor for dependable, high-frequency amplification solutions in your electronics designs. Explore more industrial electronic components at EnvMart for optimized system performance.

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