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Infineon OptiMOS N-Channel MOSFET 100 A 40 V Enhancement 8-Pin TDSON BSC014N04LSATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 5.15mm |
| Model | BSC014N04LSATMA1 |
| Width | 6.15mm |
| Mount Type | Surface |
| Series | OptiMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | J-STD20 and JESD22 |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 100A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 1.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 96W |
| Typical Gate Charge Qg @ Vgs | 61nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- Features a low 1.4mΩ Rds(on) that reduces conduction losses.
- Supports up to 96 W maximum power dissipation for thermal reliability.
- Has a maximum gate-source voltage of 20 V for robust gate drive.
- Typical gate charge is 61 nC enabling fast switching.
- Operates reliably across a temperature range from -55°C to 150°C.
- Utilizes an 8-pin TDSON surface-mount package for compact assembly.
- Designed as an enhancement mode N-channel device requiring positive gate drive.
- Suitable for DC-DC converters, synchronous buck converters, and motor driver half-bridge modules.
Product Description
Infineon BSC014N04LSATMA1 OptiMOS N-Channel MOSFET is a surface-mount power transistor designed for industrial high-current switching applications. Rated for a maximum continuous drain current of 100 A and a maximum drain-source voltage of 40 V, this device combines low conduction losses with fast switching capabilities provided by a typical gate charge of 61 nC. It operates within a broad temperature range from -55°C to 150°C, making it reliable in demanding thermal environments.
Supplied in an 8-pin TDSON package, it is optimized for compact surface-mount PCBs common in power conversion circuits. The robust gate drive capability accepting up to 20 V maximum gate-source voltage ensures protection against gate overdrive. With a low 1.4mΩ Rds(on), the MOSFET significantly reduces conduction losses, enhancing overall system efficiency.
Applications include DC-DC converter primary and secondary stages, high-current power rails for industrial equipment, synchronous buck converters, and motor driver half-bridge modules. Its efficient power dissipation rating of 96 W allows for substantial thermal loading in compact designs.
Low conduction losses due to 1.4mΩ Rds(on). High continuous current capacity of 100 A. Supports up to 96 W power dissipation for thermal management. Robust gate voltage tolerance up to 20 V. Wide operating temperature range from -55°C to 150°C.
Compact 8-pin TDSON surface-mount packaging. Enhancement-mode N-channel device requiring positive gate drive. Ideal for industrial power conversion and motor control applications. Complies with J-STD20 and JESD22 standards for reliability.
Infineon BSC014N04LSATMA1 offers a reliable and efficient solution for modern power management electronics. Explore more MOSFET and semiconductor components in the Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this model is 100 A.
It supports a maximum drain-source voltage of 40 V.
The typical gate charge is 61 nC, enabling fast switching capabilities.
It features a low Rds(on) of 1.4 mΩ, which reduces conduction losses.
This unit operates reliably across a temperature range from -55°C to 150°C.
It utilizes an 8-pin TDSON surface-mount package for compact assembly.
The maximum power dissipation is rated at 96 W, allowing for substantial thermal loading.
It complies with J-STD20 and JESD22 standards for reliability.
It requires a positive gate drive, with a maximum gate-source voltage of 20 V.
It is suitable for applications such as DC-DC converters, synchronous buck converters, and motor driver half-bridge modules.
The dimensions are 5.15 mm in length, 6.15 mm in width, and 1.1 mm in height.
This model has an N-channel type, designed for enhancement mode operation.
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