IXYS N-Channel 44A 500V Enhancement Mode HiperFET Polar MOSFET, 3-Pin TO-247 IXFH44N50P

IXYS IXFH44N50P is a high-performance N-Channel Enhancement Mode Power MOSFET from the HiperFET Polar series, designed for demanding electronic power management applications. It is housed in a 3-Pin TO-247 package facilitating through-hole mount installation, ideal for industrial and electronic component manufacturing environments.

This MOSFET offers a maximum continuous drain current of 44 amperes and can sustain a high drain-source voltage of 500 volts, enabling robust performance in high power and high voltage applications. The device supports a typical gate charge of 98 nC, allowing fast switching essential for efficient power conversion and management circuits.

Engineered to operate reliably in harsh temperature conditions, it performs across a wide temperature range of -55°C to 150°C. With a low drain-source resistance of 140 milliohms, it ensures efficient conduction, minimizing power loss and improving system efficiency.

The device has a maximum power dissipation of 650 watts, making it suitable for power electronics, motor drives, power supplies, and other high-current applications. Its gate-source voltage range of -30 to +30 volts allows for flexible and secure control of the transistor switching.

Physically, the IXFH44N50P measures 16.26 mm in length, 5.3 mm in width, and 21.46 mm in height, supporting integration into compact designs. The device is certified RoHS compliant and is free from hazardous substances. Ideal for industrial, construction, laboratory, and manufacturing machinery requiring reliable power switching devices.

Suitable for use in power electronics, motor control, and power supply circuits. Set contains one IXYS IXFH44N50P MOSFET in TO-247 packaging. This component enhances design efficiency for power electronic engineers. Explore more Power MOSFETs and electronic components in our Electronics & Electricals category at EnvMart.