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IXYS HiperFET Polar N-Channel MOSFET 7 A 800 V Enhancement 3-Pin TO-220 IXFP7N80P

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IXYS HiperFET Polar N-Channel MOSFET 7 A 800 V Enhancement 3-Pin TO-220 IXFP7N80P

Name: IXYS HiperFET Polar N-Channel MOSFET 7 A 800 V Enhancement 3-Pin TO-220 IXFP7N80P
Brand: IXYS
SKU: 148377
Price: 6.22 USD
Availability: InStock

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Category Power MOSFET Brand IXYS Condition New

Specifications

Country of Origin	India
Brand	IXYS
Height	9.15mm
Length	10.66mm
Model	IXFP7N80P
Width	4.83mm
Mount Type	Through Hole
Series	HiperFET, Polar
Maximum Operating Temperature	150°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	7A
Maximum Drain Source Voltage Vds	800V
Maximum Drain Source Resistance Rds	1.44Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	200W
Typical Gate Charge Qg @ Vgs	32nC
Maximum Gate Source Voltage Vgs	-30, +30V
Forward Voltage Vf	1.5V

Key Features

Enhancement mode channel for efficient switching performance.
Maximum power dissipation of 200 W allowing high power applications.
Low maximum drain-source resistance of 1.44 ohms reduces conduction losses.
Wide operating temperature range from -55°C to 150°C ensures reliability.
Typical gate charge of 32 nC supports fast switching.
Maximum gate-source voltage tolerance from -30 V to +30 V.
Fast intrinsic diode included for improved switching speed.
Designed for through-hole mounting in industrial electronic circuits.

Product Description

The IXYS IXFP7N80P is a robust N-Channel Power MOSFET from the HiperFET Polar series designed for high efficiency and reliable performance in electronic and industrial applications. It supports a continuous drain current of 7 A and a maximum drain-source voltage of 800 V, making it suitable for medium power switching and amplification tasks.

This MOSFET operates in enhancement mode, providing low conduction resistance (Rds(on)) of 1.44 ohms, which minimizes power losses and improves thermal characteristics. It is housed in a reliable 3-pin TO-220 through-hole package, facilitating easy integration in PCBs and power assemblies.

Designed to withstand harsh conditions, the device supports an extended temperature range from -55°C to 150°C. The maximum power dissipation is rated at 200 W, enabling the MOSFET to handle demanding industrial loads. The typical gate charge of 32 nC allows fast switching speeds, optimized for power conversion and motor drive circuits.

Additional features include a forward voltage drop of 1.5 V and a maximum gate-source voltage range of ±30 V, providing operational flexibility. Compact physical dimensions (10.66 mm length, 4.83 mm width, and 9.15 mm height) ensure compatibility with various design requirements.

Enhancement mode N-Channel MOSFET designed for power electronic applications. Maximum continuous drain current: 7 A at 800 V drain-source voltage. Low on-resistance of 1.44 ohms for efficient conduction. Fast intrinsic diode for improved switching response.

Wide operational temperature range from -55°C to 150°C. High power dissipation rating of 200 W. Package type: 3-Pin TO-220 suitable for through-hole mounting.

This MOSFET is widely used in industrial electronics, power management, motor drives, power supplies, and switching circuits. Its reliable characteristics and robust construction make it ideal for manufacturing, automation, and HVAC applications.

For detailed design and integration, engineers can access technical documentation, schematics, and 3D models through design software compatibility with DesignSpark. This enables easy prototyping and custom PCB development.

Explore more high-quality power semiconductor devices in the IXYS product range on EnvMart for your industrial and commercial needs.