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IXYS N-Channel Power MOSFET 72 A, 600 V, Enhancement Mode, 4-Pin SOT-227 IXFN82N60P

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IXYS N-Channel Power MOSFET 72 A, 600 V, Enhancement Mode, 4-Pin SOT-227 IXFN82N60P

Name: IXYS N-Channel Power MOSFET 72 A, 600 V, Enhancement Mode, 4-Pin SOT-227 IXFN82N60P
Brand: IXYS
SKU: 148376
Price: 57.01 USD
Availability: InStock

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Category MOSFET Brand IXYS Condition New

Specifications

Country of Origin	India
Brand	IXYS
Height	9.6mm
Length	38.2mm
Model	IXFN82N60P
Width	25.07mm
Mount Type	Panel
Series	HiperFET, Polar
Maximum Operating Temperature	150°C
Package Type	SOT-227
Minimum Operating Temperature	-55°C
Pin Count	4
Channel Type	N
Maximum Continuous Drain Current Id	72A
Maximum Drain Source Voltage Vds	600V
Maximum Drain Source Resistance Rds	75mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	1.04kW
Typical Gate Charge Qg @ Vgs	240nC
Maximum Gate Source Voltage Vgs	-30, +30V
Forward Voltage Vf	1.5V

Key Features

This MOSFET features a 4-pin SOT-227 package ensuring reliable panel mounting.
It belongs to the HiperFET Polar series with enhancement mode channel.
Maximum drain-source resistance of 75 milliohms provides efficient conduction.
Can dissipate up to 1.04 kW power under operating conditions.
Wide operating temperature range from -55°C to 150°C for versatile environments.
Typical gate charge of 240 nC at Vgs optimizes switching performance.
Forward voltage drop of 1.5 V ensures low conduction losses.
Absolute maximum gate-source voltage of ±30 V protects device integrity.

Product Description

The IXYS IXFN82N60P is a high-performance N-Channel Power MOSFET designed for efficient switching and power management in electronic circuits. This device operates at a maximum drain-source voltage of 600 V and can handle continuous drain current up to 72 A, enabling its use in demanding power electronics applications.

Housed in a robust 4-pin SOT-227 package suitable for panel mounting, the IXFN82N60P belongs to the HiperFET Polar series, known for fast intrinsic diode characteristics and enhancement mode operation. With a maximum drain-source resistance of 75 milliohms, this MOSFET ensures low conduction losses and superior efficiency.

Designed to dissipate up to 1.04 kW, it supports high power operation with a typical gate charge of 240 nC at Vgs, facilitating effective switching speeds. The device withstands operating temperatures from -55°C up to 150°C, making it applicable in harsh industrial, commercial, and laboratory environments.

Key physical dimensions include a length of 38.2 mm, width of 25.07 mm, and height of 9.6 mm, facilitating easy integration in power modules and electronic assemblies. The forward voltage of 1.5 V enhances conduction efficiency, and the maximum gate-source voltage tolerance of ±30 V ensures robust operation under various electrical conditions.

This MOSFET is ideal for use in power conversion, motor drives, power supplies, and industrial automation applications. It is engineered to provide reliable performance in commercial and industrial electronics requiring high voltage and current capabilities.

The device does not carry automotive or other special industry certifications, focusing instead on industrial efficiency and robustness. The HiperFET technology integration provides fast switching and reduced losses compared to conventional MOSFETs.

This component is suitable for engineers and designers seeking a compact, high-power MOSFET solution for demanding electronic designs. Explore more semiconductor components and power MOSFETs in the IXYS range and similar categories at EnvMart for comprehensive solutions in electronics and electrical engineering.