IXYS N-Channel Power MOSFET HiperFET Polar Series, 96 A, 200 V, Enhancement Mode, 3-Pin TO-247 IXFH96N20P

IXYS IXFH96N20P N-Channel Power MOSFET from the HiperFET Polar series provides high current handling capacity of 96 A and voltage rating of 200 V with enhancement mode channel operation. Packaged in a robust 3-pin TO-247 form factor, it is suitable for through-hole mounting and industrial power electronics.

This Power MOSFET features a low maximum drain-source resistance of 24 milliohms, ensuring minimal conduction losses during operation. The device can safely dissipate up to 600 W of power, supporting high performance under demanding conditions. Operating temperature range is wide, from -55°C to 175°C, supporting harsh environments.

The typical gate charge of 145 nC at Vgs, combined with a gate-source voltage range of -20 to +20 V, enables fast switching and operational flexibility. The built-in fast intrinsic diode enhances switching efficiency and circuit protection. Physical dimensions are compact with a height of 21.46 mm, length of 16.26 mm, and width of 5.3 mm.

These characteristics make the IXYS IXFH96N20P ideal for applications in industrial power management, motor drives, power supplies, and inverter designs where high reliability and efficiency are paramount. This MOSFET's robust construction supports demanding electrical and thermal loads.

Designed for through-hole mounting in power electronic circuits. Maximum gate-source voltage ranges from -20 V to +20 V. Typical gate charge is 145 nC at Vgs. Maximum power dissipation up to 600 W ensures robust performance.

Wide operating temperature range from -55°C to 175°C for diverse applications. Low drain-source resistance of 24 milliohms minimizes conduction losses. Fast intrinsic diode for efficient switching and protection. Compact TO-247 package with precise dimensions.

Explore the IXYS HiperFET Polar series and related power semiconductor devices at EnvMart for advanced power electronics solutions.