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| Country of Origin | India |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 3.05mm |
| Model | ZVP3310FTA |
| Width | 1.4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 75mA |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 20Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 330mW |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
DiodesZetex ZVP3310FTA is a high-performance P-Channel Enhancement MOSFET optimized for low current switching applications. It can continuously handle a maximum drain current of 75 mA and supports a maximum drain-source voltage rating of 100 volts, making it suitable for various electronic control circuits and power management systems. The device is housed in a compact and popular SOT-23 3-pin surface mount package, facilitating easy integration on densely populated PCBs.
This MOSFET designed by DiodesZetex features an enhancement mode channel, allowing precise control in switching applications. It supports a gate-source voltage range of -20 V to +20 V, providing flexibility in drive voltages for different circuit requirements. With a maximum power dissipation of 330 milliwatts, it ensures reliable performance while maintaining thermal stability.
Its forward voltage is low, at only 1.5 V, contributing to energy-efficient operation in switching roles. The device supports a wide operating temperature range from -55°C to +150°C, which makes it an excellent choice for industrial, automotive, and consumer electronics exposed to variable environmental conditions.
The ZVP3310FTA meets the rigorous automotive standard AEC-Q101, underscoring its suitability for automotive electronics applications where durability and reliability are critical. Its physical package size of 3.05 mm length, 1.4 mm width, and 1 mm height makes it ideal for compact electronic designs requiring surface mounted discrete semiconductor devices.
This MOSFET finds applications in power management, electronic switching, amplification, and in circuits requiring low current and low voltage operation. It is widely used in automotive electronics, consumer devices, and industrial control systems where small form factor and reliable switching characteristics are essential.
This MOSFET operates in enhancement mode for efficient switching. The device supports a maximum gate-source voltage range of -20 to +20 volts. It features a low forward voltage of 1.5 volts for improved efficiency. Designed to withstand temperatures from -55°C to 150°C, ensuring reliable operation in harsh environments.
The maximum power dissipation rating is 330 milliwatts for safe thermal management. Its compact dimensions of 3.05 mm length, 1.4 mm width, and 1 mm height optimize PCB space utilization. Built to automotive standard AEC-Q101, indicating high reliability under automotive conditions.
The device requires surface mount assembly for integration into electronic systems. Explore the Electronics & Electricals category in EnvMart for a wide range of discrete semiconductors and MOSFET products designed to meet diverse industry requirements.
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