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Infineon HEXFET N-Channel Power MOSFET 61 A 100 V Enhancement Mode 3-Pin TO-263 IRFS4510TRLPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | IRFS4510TRLPBF |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 61A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 13.9mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 140W |
| Typical Gate Charge Qg @ Vgs | 58nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- Features low 13.9mΩ maximum drain-source resistance for efficient conduction.
- Operates over a temperature range from -55°C to 175°C for high reliability.
- Designed for surface mount applications with enhancement mode channel type.
- Maximum power dissipation of 140 W ensures high performance in power circuits.
- Typical gate charge of 58nC reduces switching losses in fast switching circuits.
- Maximum gate-source voltage rating of ±20 V provides robust gate control tolerance.
- Compact dimensions of 10.67mm length, 9.65mm width, and 4.83mm height enable versatile PCB layout.
Product Description
Infineon IRFS4510TRLPBF is a HEXFET N-Channel power MOSFET designed for high-efficiency power switching applications. It supports a maximum continuous drain current of 61 A and can handle a maximum drain-source voltage of 100 V. The device features an enhancement mode channel and comes in a surface mount TO-263 package with 3 pins.
This MOSFET boasts a low maximum drain-source resistance of 13.9mΩ, ensuring minimal conduction losses and enhancing overall system efficiency. It has a maximum power dissipation rating of 140 W, allowing it to operate under demanding conditions.
The operating temperature range spans from -55°C up to 175°C, providing excellent thermal stability for industrial and automotive applications. The typical gate charge of 58nC at 10 V gate-source voltage helps to reduce switching losses in high-frequency circuits, contributing to improved performance and energy efficiency.
Its physical dimensions - length 10.67 mm, width 9.65 mm, and height 4.83 mm - offer a compact footprint suitable for various PCB layouts. The gate-source voltage tolerance of ±20 V ensures reliable gate drive safety.
This Power MOSFET from Infineon is ideal for industrial, automotive, and consumer electronic applications requiring robust power management solutions with high current and voltage capacity.
Features low 13.9mΩ maximum drain-source resistance for efficient conduction. Operates over a temperature range from -55°C to 175°C for high reliability. Designed for surface mount applications with enhancement mode channel type.
Maximum power dissipation of 140 W ensures high performance in power circuits. Typical gate charge of 58nC reduces switching losses in fast switching circuits. Maximum gate-source voltage rating of ±20 V provides robust gate control tolerance.
Compact dimensions of 10.67mm length, 9.65mm width, and 4.83mm height enable versatile PCB layout. Explore more Infineon MOSFET products on EnvMart for advanced electronic components suitable for power management and semiconductor applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 61 A.
It can handle a maximum drain-source voltage of 100 V.
The maximum power dissipation rating is 140 W.
The typical gate charge is 58 nC at a 10 V gate-source voltage.
It features a maximum drain-source resistance of 13.9 mΩ.
The dimensions are 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height.
The operating temperature range spans from -55°C to 175°C.
It comes in a surface mount TO-263 package with 3 pins.
The maximum gate-source voltage rating is ±20 V.
This model utilizes an N-channel type.
It is suitable for industrial, automotive, and consumer electronic applications requiring robust power management solutions.
The forward voltage is rated at 1.3 V.
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