Vishay E N-Channel Power MOSFET 12 A 600 V Enhancement Mode Surface Mount 4-Pin PowerPAK 8 x 8 SIHH240N60E-T1-GE3

Vishay SIHH240N60E-T1-GE3 is an E series N-Channel Power MOSFET designed for high-efficiency switching and power management applications. This device features an enhancement mode channel with a maximum continuous drain current of 12 A and a maximum drain-source voltage of 600 V, making it suitable for demanding electronic component applications.

Housed in a surface mount PowerPAK 8 x 8 package with 4 pins, this MOSFET offers low on-resistance (208 mΩ) and a maximum power dissipation of 89 W. The device supports a wide operating temperature range from -55°C to 150°C, ensuring reliability under harsh conditions.

The typical gate charge of 15 nC improves switching performance, while a forward voltage of 1.2 V and maximum gate-source voltage of 30 V optimize conduction and gate drive compatibility. Its compact form factor with dimensions of 7.9 mm by 7.9 mm and 900 μm height allows for space-efficient PCB designs.

This Power MOSFET is ideal for use in industrial, consumer electronics, automotive electronics, power supplies, and other applications requiring efficient switching and power handling. The device is RoHS compliant but does not carry specific industry approvals or automotive standards.

Features a surface mount PowerPAK 8 x 8 package with 4-pin configuration. Maximum power dissipation rating of 89 W supports high-performance applications. Low on-resistance of 208 mΩ reduces conduction losses effectively.

Supports operating temperature range from -55°C to 150°C. Typical gate charge of 15 nC enhances switching efficiency. Maximum gate-source voltage of 30 V ensures driver compatibility. Compact dimensions of 7.9 mm by 7.9 mm with 900 μm height.

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