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Infineon HEXFET N-Channel MOSFET 180 A 40 V Enhancement Mode 3-Pin TO-252 IRFR7440TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 6.22mm |
| Length | 6.73mm |
| Model | IRFR7440TRPBF |
| Width | 2.39mm |
| Mount Type | Surface |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 180A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 2.4mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 140W |
| Typical Gate Charge Qg @ Vgs | 89nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- This MOSFET features enhancement mode operation ensuring efficient switching performance.
- Maximum drain-source resistance is low at 2.4 milliohms, minimizing conduction losses.
- The device supports a maximum power dissipation of 140 W ideal for high-power applications.
- Operating temperature range from -55°C to 175°C ensures reliability in harsh environments.
- Package dimensions are compact with a height of 6.22 mm, length of 6.73 mm, and width of 2.39 mm suitable for surface mounting.
- Typical gate charge at Vgs is 89 nC facilitating fast switching speeds.
- Maximum gate-source voltage is ±20 V for robust gate drive tolerance.
- Forward voltage drop is 1.3 V, contributing to low power losses during conduction.
Product Description
Infineon IRFR7440TRPBF is a HEXFET N-Channel power MOSFET designed for high current capability with a continuous drain current rating of 180 A and a drain-source voltage of 40 V. The enhancement mode device operates efficiently with low on-resistance, making it ideal for power switching applications.
This MOSFET is packaged in a TO-252 surface mount configuration featuring 3 pins, which allows easy integration into compact power electronics designs. The device handles a maximum power dissipation of 140 W, supporting demanding load conditions while maintaining thermal stability with an operating temperature range from -55°C to 175°C.
The device exhibits a low maximum drain-source resistance of 2.4 milliohms which reduces conduction losses, enhancing system efficiency. The typical gate charge of 89 nC at Vgs allows for fast switching speed, suited for power conversion circuits.
Mechanical dimensions of the package are 6.22 mm in height, 6.73 mm in length, and 2.39 mm in width, supporting high-density PCB layouts. The maximum gate-source voltage tolerance of ±20 V provides robustness against transient voltages on the gate.
This MOSFET offers efficient switching with enhancement mode operation. Low drain-source resistance minimizes power losses during conduction. High power dissipation capability supports industrial power applications. Wide operating temperature range provides reliability in harsh conditions.
Compact TO-252 surface mount package enables space-saving circuit designs. Fast switching enabled by low typical gate charge. Robust gate voltage tolerance up to ±20 V. Forward voltage drop of 1.3 V for efficient conduction.
Specialized for industrial and power electronics applications but not automotive certified.
This Infineon HEXFET MOSFET is widely used in power management in industrial power supplies, motor control, and other applications requiring high efficiency and thermal stability. Careful thermal management and appropriate PCB layout are recommended to maximize performance.
Explore more Power MOSFETs and semiconductor solutions in EnvMart’s Electronics & Electricals category to find the optimal device for your industrial or manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for the IRFR7440TRPBF is 180 A.
This MOSFET can handle a maximum drain-source voltage of 40 V.
It has a maximum power dissipation rating of 140 W, making it suitable for high-power applications.
The typical gate charge at Vgs is 89 nC, which facilitates fast switching speeds.
The maximum gate-source voltage tolerance is ±20 V, providing robustness against transient voltages.
The dimensions of the TO-252 package are 6.22 mm in height, 6.73 mm in length, and 2.39 mm in width.
The maximum drain-source resistance is 2.4 milliohms, which minimizes conduction losses.
The operating temperature range is from -55°C to 175°C, ensuring reliability in harsh environments.
This model uses an N-channel configuration, which is typical for enhancement mode devices.
The forward voltage drop is 1.3 V, contributing to low power losses during conduction.
This MOSFET features a pin count of 3, suitable for surface mounting applications.
It supports surface mounting, making it ideal for compact power electronics designs.
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