onsemi Schottky Diode 30 V 200 mA Single Diode 3-Pin SOT-23 Package AEC-Q101 BAT54LT1G

onsemi BAT54LT1G is a high-performance Schottky barrier diode utilizing a barrier metal to optimize the trade-off between forward voltage drop and reverse leakage current. It is engineered in a compact and lightweight 3-pin SOT-23 surface mount package, measuring 2.9 mm in length, 1.3 mm in width, and 0.94 mm in height, ideal for densely populated circuit boards.

This diode supports a maximum continuous forward current of 200 mA and withstands a peak reverse repetitive voltage of 30 V, making it suitable for low voltage, high-frequency rectification tasks. Its fast switching capability with a peak reverse recovery time of 5 ns enables efficient operation in switching power supplies, polarity protection, and freewheeling diode applications.

Qualified to the automotive AEC-Q101 standard, the BAT54LT1G exhibits reliability under demanding environmental conditions, capable of functioning within an operating temperature range of -55°C to 125°C. It features a low forward voltage drop of 0.8 V which contributes to improved power efficiency in circuits.

The diode is housed in an epoxy moulded case, providing stress protection and facilitating optimal automated PCB assembly processes. Its peak non-repetitive forward surge current of 600 mA ensures resilience against transient current spikes often encountered in industrial and automotive systems.

The BAT54LT1G is used widely in automotive, industrial manufacturing, power management, and consumer electronics sectors where compact, reliable Schottky diodes are essential for efficient power rectification and protection.

This diode has a maximum forward current of 200 mA and a peak reverse voltage of 30 V. The package features a height of 0.94 mm, length of 2.9 mm, and width of 1.3 mm for space-efficient PCB designs. Designed with the AEC-Q101 automotive standard, it is qualified for automotive and industrial high-reliability uses.

It offers a low forward voltage drop of 0.8 V and fast recovery time of 5 ns, enhancing high-frequency rectification efficiency. The diode supports a wide operating temperature range from -55°C to 125°C for robust performance in harsh environments.

Lightweight epoxy moulded case with stress protection enables reliable automated assembly. Its peak non-repetitive surge current rating is 600 mA, making it suitable for transient current conditions. Explore additional semiconductor products from onsemi for your industrial and automotive electronic component needs on EnvMart.

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