$1.35
$1.31
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Infineon HEXFET N-Channel MOSFET, 110A Continuous Drain Current, 55V Drain Source Voltage, Enhancement Mode IRF3205PBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Infineon |
| Height | 8.77mm |
| Length | 10.54mm |
| Model | IRF3205PBF |
| Width | 4.69mm |
| Mount Type | Through Hole |
| Series | HEXFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 110A |
| Maximum Drain Source Voltage Vds | 55V |
| Maximum Drain Source Resistance Rds | 8mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 200W |
| Typical Gate Charge Qg @ Vgs | 146nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
| IRF3205PBF N-Channel MOSFET, 110 A, 55 V HEXFET, 3-Pin TO-220AB InfineonBrand | Infineon |
Key Features
- Capable of handling maximum continuous drain current of 110 amperes.
- Maximum drain-source voltage rating of 55 volts ensures reliable performance.
- Enhancement mode channel provides stable and efficient switching.
- Equipped with a 3-pin TO-220 package suitable for through-hole mounting.
- High maximum power dissipation of 200 watts supports demanding applications.
- Operates effectively across a temperature range from -55°C to +175°C.
- Features low on-resistance of 8 milliohms minimizing power loss.
- Typical gate charge is 146 nanocoulombs at Vgs.
Product Description
Infineon IRF3205PBF HEXFET N-Channel MOSFET is engineered for robust power management in industrial, automotive, and consumer electronics applications. Featuring a high maximum continuous drain current of 110A and a drain-source voltage of 55V, this device ensures efficient current handling and voltage stability under demanding conditions.
The enhancement mode configuration and low on-resistance of 8 milliohms provide fast and stable switching, making it ideal for power conversion, motor control, battery management, and high-frequency switching circuits. The 3-pin TO-220 package supports through-hole mounting and excellent thermal characteristics, including a maximum power dissipation of 200 watts and maximum operating temperature of 175°C.
This MOSFET operates reliably across a wide temperature spectrum from -55°C to +175°C and features a typical gate charge of 146nC, enabling precise gate control with a voltage tolerance of -20 to +20 volts. The forward voltage of 1.3V enhances conduction efficiency and device durability.
Physical dimensions of 8.77mm (height), 10.54mm (length), and 4.69mm (width) make it compact and suitable for integration into complex PCB designs where space and performance are critical.
Capable of handling maximum continuous drain current of 110 amperes. Features low on-resistance of 8 milliohms. Utilizes enhancement mode for stable operation. TO-220 package ensures effective thermal dissipation. Designed for through-hole mounting compatibility.
Wide operating temperature range from -55°C to +175°C. Maximum power dissipation rated at 200 watts. Typical gate charge of 146 nanocoulombs at gate-source voltage. Supports maximum gate-source voltage of -20 to +20 volts.
Compact dimensions for standard electronic component footprints.
This product is suitable for use in industrial electronics, power supply designs, motor drivers, renewable energy systems, and consumer electronics requiring reliable, high-current switching.
Discover complete semiconductor solutions and related components at EnvMart for your electronic design and manufacturing needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 110 amperes.
The maximum drain-source voltage rating is 55 volts.
The typical gate charge is 146 nanocoulombs at gate-source voltage.
This model uses a TO-220 package type, suitable for through-hole mounting.
It operates effectively across a temperature range from -55°C to +175°C.
The maximum power dissipation is rated at 200 watts.
The low on-resistance is 8 milliohms, which minimizes power loss.
The dimensions are 8.77mm in height, 10.54mm in length, and 4.69mm in width.
The maximum gate-source voltage is -20 to +20 volts.
This MOSFET is suitable for industrial electronics, power supply designs, motor drivers, and renewable energy systems.
It operates in enhancement mode, providing stable and efficient switching.
The forward voltage is 1.3 volts, enhancing conduction efficiency.
Related Products
$0.97
$0.94
-3%
New
Other Products from this brand
Recently Viewed Products
$40.63
$39.41
-3%
New
$59.50
$57.71
-3%
New
$34.38
$33.34
-3%
New
$1.35
$1.31
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent