Infineon HEXFET N-Channel Power MOSFET 97 A, 100 V, Enhancement Mode, 3-Pin TO-263 IRFS4410ZTRLPBF

The Infineon IRFS4410ZTRLPBF is a HEXFET N-Channel Power MOSFET designed to deliver high performance and efficiency in power switching circuits. Rated for a continuous drain current of 97 amperes and capable of withstanding a drain-source voltage of 100 volts, this enhancement mode MOSFET fits into a compact 3-pin TO-263 surface mount package that facilitates efficient heat dissipation and space-saving PCB layouts.

With a maximum power dissipation of 230 watts, the IRFS4410ZTRLPBF ensures reliable operation even under demanding thermal conditions. Its low on-resistance of 9 milliohms reduces conduction losses, contributing to higher overall system efficiency and lower heat generation.

The device operates reliably across a wide temperature range from -55°C to 175°C, making it suitable for harsh industrial and automotive environments. The typical gate charge of 83 nC enables rapid switching, enhancing the performance of DC-DC converters, motor drivers, power supplies, and other electronic circuits requiring efficient power control.

This surface mount MOSFET supports gate voltages between -20 V and +20 V, providing flexibility in drive voltage design and system integration. The compact TO-263 package measures approximately 10.67 mm in length, 11.3 mm in width, and 4.83 mm in height.

Supports high continuous drain current of 97 amperes for robust power handling. Maximum drain-source voltage rating of 100 volts suitable for medium voltage circuits. Features low on-resistance of 9 milliohms to minimize conduction losses.

Rated maximum power dissipation of 230 watts for reliable thermal performance. Enhancement mode N-channel MOSFET optimized for surface mount installation. Wide operating temperature range from -55°C to 175°C ensuring durability.

Package dimensions approximately 10.67 mm length, 11.3 mm width, and 4.83 mm height. Gate voltage tolerance of -20 V to +20 V allows high voltage driving signals. Typical gate charge of 83 nC supporting fast switching capability.

Suitable for industrial, automotive, and power management electronics applications.

This MOSFET is ideal for use in industrial power electronics, automotive electronic control units, power converters, and general semiconductor applications where high efficiency and reliability are critical.

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