onsemi PowerTrench N-Channel MOSFET, 2.3 A, 150 V Enhancement Mode, 6-Pin SOT-23 FDC86244

onsemi FDC86244 PowerTrench N-Channel MOSFET is a high-performance discrete semiconductor designed for switching and amplification applications in industrial and electronic circuits. It supports a maximum continuous drain current of 2.3 Amps and withstands a maximum drain-source voltage of 150 Volts, making it ideal for low to medium power applications.

The device employs an enhancement mode channel with a maximum drain-source resistance of 273 milliohms, delivering efficient conduction with minimal power loss. It operates within a wide temperature range from -55°C to 150°C, ensuring reliable performance under harsh environmental conditions.

Physically, the MOSFET comes in a compact 6-pin SOT-23 surface mount package with dimensions approximately 3mm in length, 1.7mm in width, and 1mm in height, suitable for space-constrained circuit boards. It features a typical gate charge of 4.2 nanocoulombs at the gate-source voltage threshold, optimizing switching speed and efficiency.

This component finds extensive applications in industrial, electronic, and power management systems where efficient switching is critical. It is not rated for automotive standard compliance but fits well in commercial electronics manufacturing.

This MOSFET offers a robust maximum power dissipation of 1.6 Watts for sustained operation. The maximum gate-source voltage rating between -20 to +20 Volts helps protect against voltage spikes. The forward voltage drop of 1.3 Volts contributes to low conduction losses.

Its surface mount package eases automated PCB assembly in electronics manufacturing. The device's wide operating temperature range supports military, industrial, and commercial electronics. For a comprehensive semiconductor selection in power management, explore more MOSFETs and power electronic components available in the EnvMart catalog.