DiodesZetex Isolated 2 Type P-Channel Power MOSFET, 5.8 A, 40 V Enhancement, 8-Pin SOIC DMP4025LSD-13

DiodesZetex DMP4025LSD-13 is a dual isolated P-channel power MOSFET designed for high-efficiency power management applications requiring a maximum continuous drain current of 5.8 A and a maximum drain-source voltage of 40 V. Packaged in a compact and surface-mount 8-pin SOIC, this enhancement mode transistor combines excellent electrical characteristics with a small form factor, measuring 4.95 mm in length, 3.95 mm in width, and 1.5 mm in height.

This device operates efficiently over a wide temperature range from -55°C to +150°C, making it suitable for automotive, industrial, and consumer electronics applications where thermal endurance is critical. It meets multiple quality, safety, and industry certifications including MIL-STD-202, RoHS, AEC-Q101, UL 94V-0, and J-STD-020, alongside automotive standards AEC-Q100, AEC-Q101, and AEC-Q200, establishing its reliability in stringent production requirements.

The typical gate charge of 14 nC at the specified gate voltage improves switching speeds, helping to reduce power loss in switching operations. Low drain source resistance of 45 milliohms minimizes conduction losses, enhancing overall circuit efficiency. The device supports a maximum power dissipation of 2.14 W, providing dependable thermal performance under load.

Its isolated transistor configuration facilitates integration into complex circuits with dual P-channel MOSFET elements per chip, optimizing space and functionality. The package type being SOIC and mount type surface-mount ensures easy PCB assembly in automated production environments.

Maximum continuous drain current of 5.8 A for high current applications. Rated drain-source voltage of 40 V suitable for moderate voltage power circuits. Compact 8-pin SOIC surface-mount package ensuring PCB space savings.

Wide operating temperature range from -55°C to +150°C. Certified to MIL-STD-202, RoHS, AEC-Q101, UL 94V-0, and J-STD-020 standards. Automotive grade compliance with AEC-Q100, AEC-Q101, and AEC-Q200. Low drain source resistance of 45 mΩ for reduced power loss.

Dual P-channel transistor configuration for dual element applications. Maximum power dissipation rating of 2.14 W. Typical gate charge of 14 nC for enhanced switching efficiency.

This MOSFET transistor is ideal for applications in industrial electronics, automotive controls, power supplies, and robust consumer electronics requiring reliable, high-performance power switching components. Its certifications and automotive ratings ensure its appropriateness for demanding environments and safety standards.

Explore the complete category of Power MOSFETs on EnvMart for related high-quality semiconductor components optimized for professional electronics manufacturing and prototyping needs.