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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 0.75mm |
| Length | 2mm |
| Model | FDMA910PZ |
| Width | 2mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | MLP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 9.4A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 34mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.4W |
| Typical Gate Charge Qg @ Vgs | 21nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
onsemi FDMA910PZ PowerTrench Type P-Channel MOSFET is a surface-mount semiconductor device designed for efficient switching and power management in electronic applications. Featuring a 6-pin MLP package, it delivers a maximum continuous drain current of 9.4 A and a drain-source voltage rating of 20 V. The device operates in enhancement mode with a low drain-source resistance of 34 mΩ, enabling increased system efficiency and power density.
The PowerTrench technology incorporated in this MOSFET optimizes switching performance by combining small gate charge and reduced reverse recovery charge with a soft reverse recovery body diode. This design contributes to fast synchronous rectification in AC/DC converters and power supplies, often eliminating the need for snubber circuits or higher voltage MOSFETs.
With a maximum power dissipation of 2.4 W, the FDMA910PZ operates reliably across an extended temperature range from −55°C to 150°C. The typical gate charge is 21 nC at gate voltage, and it supports a maximum gate-source voltage of ±8 V, ensuring robust gate control. The compact form factor with dimensions 2 mm × 2 mm × 0.75 mm facilitates integration into densely packed industrial or commercial electronic assemblies.
This MOSFET is ideal for use in industrial power switching, power supplies, motor control circuits, and other applications where efficient, reliable P-channel switching is required. It is compliant with relevant standards although it does not carry specific automotive or approval certifications.
Features low Rds(on) of 34 mΩ for efficient power switching. Optimized for fast switching with PowerTrench technology and soft body diode. Wide operating temperature range from −55°C to 150°C for diverse environments. Compact 6-pin MLP package suitable for surface mount technology applications.
Maximum power dissipation of 2.4 W for robust performance. Typical gate charge of 21 nC enhances switching speed and reduces losses. Explore more semiconductor and MOSFET devices at EnvMart for industrial, laboratory, commercial, and electronic manufacturing solutions.
Explore more products in our Power MOSFET category.
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