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onsemi P-Channel Power MOSFET Surface Mount 9A 30V Enhancement Mode 8-Pin ECH ECH8310-TL-H

Category Power MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.9mm
Length 2.9mm
Model ECH8310-TL-H
Width 2.3mm
Mount Type Surface
Series ECH8310
Maximum Operating Temperature 150°C
Package Type ECH
Minimum Operating Temperature -55°C
Pin Count 8
Channel Type Type P
Maximum Continuous Drain Current Id 9A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 17mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.5W
Typical Gate Charge Qg @ Vgs 28nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -1.2V

Key Features

  • Surface mount package with 8 pins for efficient PCB integration.
  • Maximum continuous drain current of 9 amperes for robust power handling.
  • Drain-source voltage rating of 30 volts suitable for mid-range power applications.
  • Enhancement mode P-Channel MOSFET designed for switching and amplification.
  • Low maximum drain-source resistance of 17 milliohms for reduced power loss.
  • Typical gate charge of 28 nanocoulombs ensuring switching efficiency.
  • Maximum power dissipation rated at 1.5 watts for thermal management.
  • Wide operating temperature range from -55°C to 150°C for industrial applications.

Product Description

onsemi ECH8310-TL-H is a P-Channel Power MOSFET designed for high-performance electronic power applications requiring efficient surface mount components. Rated with a maximum continuous drain current of 9 amperes and a drain-source voltage of 30 volts, it is suitable for switching and amplification tasks in industrial electronics, power management, and semiconductor circuits.

This enhancement mode MOSFET features a low maximum drain-source resistance of 17 milliohms, which helps minimize conduction losses and improve energy efficiency. The device supports a wide operating temperature range from -55°C to 150°C, making it robust for use in harsh environments.

The MOSFET is housed in an 8-pin ECH package with compact dimensions of 2.9mm length, 2.3mm width, and 0.9mm height, facilitating easy integration into printed circuit boards. It offers a typical gate charge of 28 nanocoulombs and can handle gate-source voltages from -20V to +20V, which ensures reliable and stable gate drive performance.

Applications include industrial power control, power supply circuits, motor drivers, and other semiconductor-based electronic equipment requiring compact and efficient MOSFET solutions. Its surface mount design supports automated assembly for mass production environments.

Surface mount package with 8 pins for efficient PCB integration. Maximum continuous drain current of 9 amperes for robust power handling. Drain-source voltage rating of 30 volts suitable for mid-range power applications.

Enhancement mode P-Channel MOSFET designed for switching and amplification. Low maximum drain-source resistance of 17 milliohms for reduced power loss. Typical gate charge of 28 nanocoulombs ensuring switching efficiency.

Maximum power dissipation rated at 1.5 watts for thermal management. Wide operating temperature range from -55°C to 150°C for industrial applications. Compact dimensions: 2.9mm length, 2.3mm width, and 0.9mm height. Gate-source voltage tolerance of -20V to +20V.

The ECH8310-TL-H from onsemi is compliant for use in industrial and commercial semiconductor devices and is a reliable choice for engineers designing power management circuits. Explore similar MOSFETs and semiconductor components in the Electronics & Electricals category on EnvMart for comprehensive solutions.

onsemi P-Channel Power MOSFET Surface Mount 9A 30V Enhancement Mode 8-Pin ECH ECH8310-TL-H
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Frequently Asked Questions

The maximum continuous drain current for this model is 9 amperes.

The drain-source voltage rating is 30 volts, making it suitable for mid-range power applications.

This model has compact dimensions of 2.9mm in length, 2.3mm in width, and 0.9mm in height.

The maximum power dissipation rated for this model is 1.5 watts.

The typical gate charge is 28 nanocoulombs, ensuring efficient switching performance.

It operates within a wide temperature range from -55°C to 150°C, suitable for industrial applications.

The maximum gate-source voltage tolerance is -20V to +20V.

It is housed in an 8-pin ECH surface mount package, facilitating efficient PCB integration.

The maximum drain-source resistance is 17 milliohms, which helps reduce power loss.

It is suitable for applications including industrial power control, power supply circuits, and motor drivers.

This model features a P-channel type, designed for enhancement mode operation.

The forward voltage is -1.2 volts.

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