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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 0.9mm |
| Length | 2.9mm |
| Model | ECH8310-TL-H |
| Width | 2.3mm |
| Mount Type | Surface |
| Series | ECH8310 |
| Maximum Operating Temperature | 150°C |
| Package Type | ECH |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 9A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 17mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.5W |
| Typical Gate Charge Qg @ Vgs | 28nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
onsemi ECH8310-TL-H is a P-Channel Power MOSFET designed for high-performance electronic power applications requiring efficient surface mount components. Rated with a maximum continuous drain current of 9 amperes and a drain-source voltage of 30 volts, it is suitable for switching and amplification tasks in industrial electronics, power management, and semiconductor circuits.
This enhancement mode MOSFET features a low maximum drain-source resistance of 17 milliohms, which helps minimize conduction losses and improve energy efficiency. The device supports a wide operating temperature range from -55°C to 150°C, making it robust for use in harsh environments.
The MOSFET is housed in an 8-pin ECH package with compact dimensions of 2.9mm length, 2.3mm width, and 0.9mm height, facilitating easy integration into printed circuit boards. It offers a typical gate charge of 28 nanocoulombs and can handle gate-source voltages from -20V to +20V, which ensures reliable and stable gate drive performance.
Applications include industrial power control, power supply circuits, motor drivers, and other semiconductor-based electronic equipment requiring compact and efficient MOSFET solutions. Its surface mount design supports automated assembly for mass production environments.
Surface mount package with 8 pins for efficient PCB integration. Maximum continuous drain current of 9 amperes for robust power handling. Drain-source voltage rating of 30 volts suitable for mid-range power applications.
Enhancement mode P-Channel MOSFET designed for switching and amplification. Low maximum drain-source resistance of 17 milliohms for reduced power loss. Typical gate charge of 28 nanocoulombs ensuring switching efficiency.
Maximum power dissipation rated at 1.5 watts for thermal management. Wide operating temperature range from -55°C to 150°C for industrial applications. Compact dimensions: 2.9mm length, 2.3mm width, and 0.9mm height. Gate-source voltage tolerance of -20V to +20V.
The ECH8310-TL-H from onsemi is compliant for use in industrial and commercial semiconductor devices and is a reliable choice for engineers designing power management circuits. Explore similar MOSFETs and semiconductor components in the Electronics & Electricals category on EnvMart for comprehensive solutions.
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