onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 2.9 A, 30 V Enhancement, 6-Pin MLP FDMA3023PZ

onsemi FDMA3023PZ is an Isolated PowerTrench 2 Type P-Channel MOSFET designed for efficient switching in electronic power components. This device supports a continuous drain current of 2.9 A and a maximum drain-source voltage of 30 V, making it ideal for power management in compact circuits.

This MOSFET utilizes advanced PowerTrench technology, featuring a shielded-gate structure that enhances charge balance and reduces the Figure of Merit compared to previous designs. Its low typical gate charge of 7.9 nC at gate voltage supports high-speed switching performance, essential in synchronous rectification within AC/DC power supplies.

Encased in a 6-pin MLP surface mount package with compact dimensions of 2 mm x 2 mm x 0.75 mm, the FDMA3023PZ facilitates high-density board layouts and automated manufacturing processes. Its capability to operate between -55°C and 150°C ensures dependable functionality across industrial, commercial, and automotive temperature ranges.

The device incorporates a soft reverse recovery body diode that can eliminate the need for snubber circuits or permit the replacement of higher voltage MOSFETs, enhancing system efficiency and simplifying design. The isolated transistor configuration supports safe integration into various semiconductor systems.

This MOSFET finds applications in industrial electronics, power supply modules, and control systems where efficient power switching and durability are critical. Its small footprint, combined with high thermal performance, caters to demanding environments including laboratory instrumentation, industrial automation, and HVAC electronics.

Supports a maximum continuous drain current of 2.9 A for robust power handling. Features a maximum drain-source voltage of 30 V suitable for various power circuits. Operates efficiently with low gate charge of 7.9 nC at Vgs enhancing switching speed.

Designed with a 6-pin MLP package for compact mounting and minimal footprint. Capable of operating at temperatures ranging from -55°C to 150°C for reliable performance. Incorporates PowerTrench technology providing reduced Figure of Merit for improved efficiency.

Utilizes a shielded-gate structure and soft reverse recovery body diode for fast switching and reduced losses. Isolated transistor configuration allows integration into complex circuits with stability. Has a typical forward voltage of -0.8 V to minimize conduction losses.

Manufactured to surface mount standards ensuring compatibility with automated assembly. Explore the extensive range of semiconductor components in EnvMart’s Electronics & Electricals category for advanced industrial applications.