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Infineon HEXFET N-Channel MOSFET 36 A 100 V Enhancement Mode 3-Pin TO-220 AUIRF540Z

Category MOSFET Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 16.51mm
Length 10.66mm
Model AUIRF540Z
Width 4.82mm
Mount Type Through Hole
Series HEXFET
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 36A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 26.5mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 92W
Typical Gate Charge Qg @ Vgs 42nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.3V

Key Features

  • This MOSFET features an enhancement mode channel for efficient switching.
  • Designed for automotive applications with AEC-Q101 qualification.
  • Maximum power dissipation of 92 W ensures reliable thermal handling.
  • Includes 3-pin through hole mounting for easy PCB integration.
  • Operates between -55°C to 175°C for broad industrial temperature range.
  • Rds(on) of 26.5 mΩ to minimize conduction losses.
  • Maximum gate-source voltage ranges from -20 V to +20 V for robust gate control.
  • Compact dimensions (length 10.66 mm, width 4.82 mm, height 16.51 mm) optimize PCB space.

Product Description

Infineon AUIRF540Z HEXFET N-Channel MOSFET is a power semiconductor device designed for high efficiency and reliability in industrial and automotive applications. This transistor supports a continuous drain current of 36 A with a drain-source voltage rating of 100 V, making it suitable for power switching and load control tasks under demanding conditions.

The device utilizes enhancement mode channel technology and comes in a TO-220 package with three pins, facilitating through-hole mounting on PCBs. Its low on-resistance of 26.5 mΩ significantly reduces conduction losses, aiding in improved system energy efficiency.

With a maximum power dissipation rating of 92 W and an operating temperature range from -55°C to 175°C, this MOSFET accommodates harsh environmental conditions typical in automotive and industrial settings. Its robust gate-source voltage tolerance of ±20 V ensures resilience against electrical stresses.

Physical dimensions of 10.66 mm length, 4.82 mm width, and 16.51 mm height provide a compact footprint optimized for space-constrained designs. The component is AEC-Q101 automotive standard qualified, offering assurance of quality and reliability in automotive electronics.

Enhancement mode N-channel MOSFET optimized for power efficiency. 36 A continuous drain current with 100 V voltage capability. TO-220 package with through-hole mounting for ease of installation. Low drain-source resistance minimizes conduction losses.

Wide operating temperature range supports industrial and automotive use. AEC-Q101 qualification for automotive-grade component standards. High gate-source voltage tolerance enhances durability in varied applications. Compact form factor suitable for various power electronics designs.

This Infineon MOSFET is ideal for use in power management, motor drives, and automotive electronic applications within industrial, manufacturing, and automotive sectors. Its robust specifications ensure optimal performance, efficiency, and long service life under challenging operating conditions.

Explore more semiconductor solutions and power components offered by EnvMart to enhance your electronic and industrial system designs.

Infineon HEXFET N-Channel MOSFET 36 A 100 V Enhancement Mode 3-Pin TO-220 AUIRF540Z
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Frequently Asked Questions

The maximum continuous drain current for this model is 36 A.

This MOSFET has a maximum drain-source voltage rating of 100 V.

It comes in a TO-220 package and features a through-hole mounting style.

The operating temperature range is from -55°C to 175°C.

The Rds(on) value is 26.5 mΩ, which helps minimize conduction losses.

The maximum power dissipation rating for this MOSFET is 92 W.

The typical gate charge (Qg) at Vgs is 42 nC.

This model is qualified under the AEC-Q101 automotive standard.

The dimensions are 10.66 mm in length, 4.82 mm in width, and 16.51 mm in height.

The maximum gate-source voltage ranges from -20 V to +20 V.

This device utilizes an N-channel enhancement mode.

It is commonly used in power management, motor drives, and automotive electronic applications.

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