Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Vishay P-Channel MOSFET 8 A 60 V Enhancement Mode 8-Pin PowerPAK 1212-8 SI7309DN-T1-E3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.04mm |
| Length | 3.05mm |
| Model | SI7309DN-T1-E3 |
| Width | 3.05mm |
| Mount Type | Surface |
| Series | Si7309DN |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK 1212-8 |
| Minimum Operating Temperature | -65°C |
| Standards/Approvals | IEC 61249-2-21 |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 0.115Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 19.8W |
| Typical Gate Charge Qg @ Vgs | 14.5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- The device operates in enhancement mode with a channel resistance of 0.115 ohms.
- Maximum power dissipation is 19.8 W with an operating temperature range from -65°C to 150°C.
- Typical gate charge at Vgs is 14.5 nC ensuring efficient switching performance.
- Maximum gate-source voltage rating is ±20 V suitable for standard gate drive voltages.
- Compact dimensions of 3.05 mm length, 3.05 mm width, and 1.04 mm height facilitate surface mount applications.
- Package type PowerPAK 1212-8 supports efficient thermal management.
- Conforms to IEC 61249-2-21 standards ensuring quality and reliability.
- Manufactured in China to stringent quality controls.
Product Description
Vishay SI7309DN-T1-E3 is a reliable P-Channel MOSFET designed for power management and switching applications in industrial, automotive, and electronics sectors. This enhancement mode MOSFET supports a continuous drain current of 8 A and can withstand a maximum drain-source voltage of 60 V.
The device is housed in a compact 8-pin PowerPAK 1212-8 surface-mount package, measuring 3.05 mm in length and width, and 1.04 mm in height, which offers efficient thermal dissipation and facilitates integration into high-density circuit boards.
The low drain-source resistance of 0.115 ohms reduces conduction losses, improving energy efficiency in switching circuits. The maximum power dissipation rating of 19.8 W allows operation under significant load conditions.
Operating temperature range spans from -65°C to 150°C, enabling performance stability in harsh thermal environments commonly encountered in industrial and automotive applications. Typical gate charge of 14.5 nC at the gate-source voltage ensures fast switching and low switching losses.
The MOSFET withstands gate-source voltages up to ±20 V, suitable for standard gate driving voltages prevalent in power electronics. The device meets IEC 61249-2-21 standards, ensuring compliance and quality assurance in manufacturing processes.
The enhancement mode channel configuration optimizes control in switching applications. Robust package design aids in thermal management and mechanical stability. Suitable for surface mount technology for compact device layouts.
Ideal for use in power conversion, motor control, and load switching applications. The device supports efficient energy use due to low on-resistance and gate charge. Manufactured in China with stringent quality control. Explore the comprehensive selection of Vishay MOSFETs and semiconductors at EnvMart for your electronic component needs.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 8 A.
This MOSFET can withstand a maximum drain-source voltage of 60 V.
The channel resistance is 0.115 ohms, which helps reduce conduction losses.
The typical gate charge at Vgs is 14.5 nC, ensuring efficient switching performance.
The operating temperature range spans from -65°C to 150°C.
The maximum power dissipation rating is 19.8 W.
The package dimensions are 3.05 mm in length, 3.05 mm in width, and 1.04 mm in height.
The maximum gate-source voltage rating is ±20 V.
It conforms to IEC 61249-2-21 standards, ensuring quality and reliability.
This MOSFET supports surface mount technology, facilitating compact device layouts.
The channel type is P-Channel, designed for enhancement mode operation.
Related Products
$0.97
$0.94
-3%
New
Other Products from this brand
$1.99
$1.93
-3%
New
$1.69
$1.64
-3%
New
$1.82
$1.77
-3%
New
$1.54
$1.50
-3%
New
$0.30
$0.29
-3%
New
Recently Viewed Products
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent