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onsemi PowerTrench Type P-Channel MOSFET 30 V 20 A 8-Pin SOIC FDS6681Z
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | FDS6681Z |
| Width | 4mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 185nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -1.2V |
Key Features
- The MOSFET features a maximum continuous drain current of 20 amperes.
- It supports a maximum drain-source voltage of 30 volts for robust operation.
- The device exhibits a low drain-source resistance of 5 milliohms to reduce conduction losses.
- Maximum power dissipation is rated at 2.5 watts, ensuring thermal stability under load.
- Operating temperature range spans from -55°C to 150°C for reliable performance in extreme environments.
- It uses an enhancement mode channel with a gate voltage rating of -25 V to +25 V.
- Compact dimensions measure 5 mm length, 4 mm width, and 1.5 mm height in a surface mount SOIC form factor.
- Typical gate charge of 185 nC facilitates efficient switching in power supply designs.
Product Description
onsemi FDS6681Z PowerTrench Type P-Channel MOSFET is a surface-mount component delivering a continuous drain current of 20 A and a maximum drain-source voltage of 30 V. This enhancement mode device is optimized with a shielded-gate structure to provide improved switching performance and efficiency.
Featuring a low Rds(on) of 5 mΩ and a maximum power dissipation of 2.5 W, it is suitable for applications requiring efficient power management, such as AC/DC synchronous rectification and power conversion circuits.
The MOSFET can operate reliably across a wide temperature range from -55°C to 150°C, making it ideal for industrial, commercial, and automotive electronic systems (although it does not meet automotive standards).
The 8-pin SOIC package ensures compact integration on printed circuit boards with surface mount technology. Typical gate charge of 185 nC enables rapid switching speeds, improving overall system efficiency.
Soft body diode characteristics reduce the need for additional snubber circuits, minimizing component count and cost. This PowerTrench MOSFET series is designed to enhance power density and switching characteristics with low gate charge and recovery charge.
This device is appropriate for applications in power supply design, industrial electronics, and discrete semiconductor replacement where efficient high-current switching is required.
Maximum continuous drain current: 20 A. Maximum drain-source voltage: 30 V. Drain-source resistance: 5 mΩ. Power dissipation rating: 2.5 W. Operation temperature range: -55°C to 150°C. Gate charge typical: 185 nC. Package: 8-pin SOIC, surface mount.
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Frequently Asked Questions
The maximum continuous drain current for this model is 20 amperes.
This MOSFET supports a maximum drain-source voltage of 30 volts.
The dimensions of this unit are 5 mm in length, 4 mm in width, and 1.5 mm in height.
The typical gate charge for this model is 185 nC, which facilitates efficient switching.
The maximum power dissipation rating for this device is 2.5 watts.
It operates reliably within a temperature range of -55°C to 150°C.
This MOSFET is packaged in an 8-pin SOIC surface mount format.
The maximum gate-source voltage for this model is rated at -25V to +25V.
The drain-source resistance is rated at 5 milliohms, which helps reduce conduction losses.
This model features a Type P channel, optimized for enhancement mode operation.
It is suitable for applications requiring efficient power management, such as AC/DC synchronous rectification and power conversion circuits.
The country of origin for this MOSFET is India.
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