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onsemi N-Channel MOSFET 500 mA 60 V Enhancement 3-Pin SOT-23 MMBF170LT1G

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 940μm
Length 2.9mm
Model MMBF170LT1G
Width 1.3mm
Mount Type Surface
Series MMBF170L
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 500mA
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 5Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 225mW
Typical Gate Charge Qg @ Vgs 160nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V
N-channel MOSFET,MMBF170 0.5A 60VBrand ON Semiconductor

Key Features

  • Offers enhancement mode channel operation for efficient switching.
  • Maximum power dissipation rating of 225 mW for reliable performance.
  • Low typical gate charge of 160 nC improving switching speed.
  • Surface mount SOT-23 package ideal for space-constrained applications.
  • Operating temperature range from -55°C to 150°C supports industrial uses.
  • Forward voltage of 1.2 V ensures low voltage drop during conduction.
  • Drain source resistance of 5 Ω minimizes power losses.

Product Description

onsemi MMBF170LT1G is a high-quality N-Channel MOSFET designed for low power amplification and switching applications. It supports continuous drain current up to 500 mA and withstands a maximum drain source voltage of 60 V. The enhancement mode channel ensures efficient switching capability and low power dissipation rated at 225 mW.

Housed in a compact 3-pin SOT-23 surface mount package, this component is well suited for use in electronics where space savings and reliable surface mounting are essential. It exhibits low typical gate charge of 160 nC at gate-source voltage, which contributes to fast switching performance and efficiency in power circuits.

The device can operate reliably in harsh industrial environments with a wide temperature range from -55°C minimum to 150°C maximum, compatible with demanding HVAC, industrial control, and manufacturing electronics applications.

Additional features include a low forward voltage of 1.2 V and a maximum drain-source resistance of 5 Ω, balancing conduction losses for energy-efficient operation. Precise and compact mechanical dimensions (2.9 mm length, 1.3 mm width, 940 μm height) facilitate easy integration into circuit boards.

This MOSFET is typically employed in power conversion, driver circuits, and other semiconductor switching roles in both commercial and industrial electronics environments. Offers enhancement mode channel operation for efficient switching.

Maximum power dissipation rating of 225 mW for reliable performance. Low typical gate charge of 160 nC improving switching speed. Surface mount SOT-23 package ideal for space-constrained applications. Operating temperature range from -55°C to 150°C supports industrial uses.

Forward voltage of 1.2 V ensures low voltage drop during conduction. Drain source resistance of 5 Ω minimizes power losses. Compact dimensions: length 2.9 mm, width 1.3 mm, height 940 μm. Explore the comprehensive range of MOSFETs including onsemi models for diverse electronics design and manufacturing tasks on EnvMart.

onsemi N-Channel MOSFET 500 mA 60 V Enhancement 3-Pin SOT-23 MMBF170LT1G
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Frequently Asked Questions

The maximum continuous drain current for this model is 500 mA.

It can withstand a maximum drain-source voltage of 60 V.

The maximum power dissipation rating is 225 mW.

The typical gate charge is 160 nC at gate-source voltage.

It operates within a temperature range from -55°C to 150°C.

The dimensions are 2.9 mm in length, 1.3 mm in width, and 940 μm in height.

It comes in a surface mount SOT-23 package.

The forward voltage is 1.2 V, ensuring a low voltage drop during conduction.

The maximum drain-source resistance is 5 Ω.

It is an N-channel MOSFET with enhancement mode channel operation.

This model is typically employed in power conversion, driver circuits, and other semiconductor switching roles in commercial and industrial electronics.

The maximum gate-source voltage is -20 V to +20 V.

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