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Vishay N-Channel Power MOSFET, 600 V, 9.2 A, TO-263 Surface Mount, Enhancement Mode IRFS9N60APBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | IRFS9N60APBF |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | IRFS9N60A |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9.2A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 750mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 170W |
| Typical Gate Charge Qg @ Vgs | 49nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.5V |
| N-channel MOSFET,IRFS9N60A 9.2A 600VBrand | Vishay |
Key Features
- Supports high-voltage switching applications up to 600 V.
- Offers continuous drain current of 9.2 A for moderate load demands.
- Low on-resistance of 750 mΩ reduces conduction losses.
- Maximum power dissipation rating of 170 W enables significant power throughput.
- Typical gate charge of 49 nC optimises switching performance.
- Designed for operation over a wide temperature range from -55°C to 150°C.
- Enhancement mode operation requiring positive gate drive voltage.
- Surface-mount TO-263 package facilitates heat dissipation and automated assembly.
Product Description
Vishay IRFS9N60APBF is a high-voltage N-channel Power MOSFET designed for robust surface-mount switching applications requiring reliable thermal and electrical performance. The device supports a maximum drain-to-source voltage of 600 V and can continuously conduct drain currents up to 9.2 A. Packaged in a TO-263 surface mount format, it facilitates efficient heat dissipation and automated PCB assembly.
Engineered with enhancement mode operation, it requires a positive gate drive voltage relative to source for conduction. The MOSFET features a low maximum drain-source on-resistance of 750 mΩ, minimizing conduction losses during operation, and a maximum power dissipation of 170 W for significant power handling capabilities. The typical gate charge of 49 nC aids in optimizing switching dynamics for efficient performance in power conversion systems.
Rated for operation from -55°C to 150°C, this MOSFET can withstand wide thermal extremes, making it suitable for demanding industrial environments. It includes robust voltage ratings with a maximum gate-source voltage swing of ±30 V, which protects the device's gate oxide from damage during operation.
This component is ideally suited for applications including offline switch-mode power supplies, high-voltage motor drive stages, inverter and renewable energy converters, industrial power control circuits, and high-voltage lighting ballasts.
High-voltage 600 V rating allows efficient switching in power circuits. 9.2 A continuous drain current supports moderate load requirements. Low Rds(on) reduces power losses and heat generation. Surface mount TO-263 package ensures effective heat dissipation.
Wide operating temperature range from -55°C to 150°C enhances reliability. Enhancement mode N-channel MOSFET for easy gate driving. Ideal for power conversion, switching, and high-voltage applications. Explore more high-performance power semiconductor devices in our Electronics & Electricals Semiconductor category at EnvMart.
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Frequently Asked Questions
The maximum drain-to-source voltage for this model is 600 V, making it suitable for high-voltage switching applications.
It can continuously conduct a drain current of up to 9.2 A, which supports moderate load demands in various applications.
The maximum drain-source on-resistance is 750 mΩ, which helps reduce conduction losses during operation.
This model has a maximum power dissipation rating of 170 W, allowing for significant power throughput in applications.
It is rated for operation over a wide temperature range from -55°C to 150°C, enhancing its reliability in various environments.
The device is packaged in a TO-263 surface mount format, which facilitates efficient heat dissipation and automated assembly.
The typical gate charge is 49 nC, which optimizes switching performance in power conversion systems.
The maximum gate-source voltage swing is ±30 V, which protects the gate oxide from damage during operation.
Yes, it is designed for high-voltage applications such as offline switch-mode power supplies and high-voltage motor drives.
The dimensions are 4.83 mm in height, 10.67 mm in length, and 9.65 mm in width.
This model is RoHS compliant, ensuring it meets environmental regulations regarding hazardous substances.
It features an N-channel configuration and operates in enhancement mode, requiring a positive gate drive voltage for conduction.
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