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Vishay N-Channel Power MOSFET 3.1 A 1 kV TO-220AB Package Enhancement Mode IRFBG30PBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | IRFBG30PBF |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | IRFBG30 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220AB |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 3.1A |
| Maximum Drain Source Voltage Vds | 1kV |
| Maximum Drain Source Resistance Rds | 5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 125W |
| Typical Gate Charge Qg @ Vgs | 80nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.8V |
| N-channel MOSFET,IRFBG30 3.1A 1000VBrand | Vishay |
Key Features
- High-voltage switching capability with 1000 V drain-source rating.
- Supports maximum power dissipation of 125 W for sustained operation.
- Controlled conduction losses with a maximum Rds(on) of 5 ohms.
- Operates from -55°C to 150°C ensuring wide temperature reliability.
- Typical gate charge of 80 nC facilitates precise gate driving.
- Enhancement mode N-channel device suitable for industrial and electronic systems.
- Designed for through-hole mounting to TO-220AB package footprint.
- Ideal for high-voltage power supplies, motor drives, and energy management circuits.
Product Description
Vishay IRFBG30PBF is a high-voltage N-channel power MOSFET designed for robust switching and power conversion applications. It features a maximum drain-source voltage of 1000 V and a continuous drain current rating of 3.1 A, housed in a durable TO-220AB 3-pin through-hole package.
This device supports a maximum power dissipation of 125 W, making it suitable for demanding industrial electronic environments where sustained power handling is required. The maximum drain-source resistance Rds(on) of 5 ohms helps minimize conduction losses during operation.
With an operating temperature range from -55°C to 150°C and a typical gate charge of 80 nC at Vgs, the IRFBG30PBF facilitates precise and efficient gate control. It operates in enhancement mode, suitable for switching stages in motor-drive gate circuits, high-voltage power supplies, and isolated switching for mains-related equipment.
Thermal management is improved via the TO-220AB package with through-hole mounting and compatibility with heatsinks, ensuring reliable performance at higher power levels. The maximum gate-source voltage must not exceed ±20 V to avoid gate oxide stress.
High voltage rating suited for power converters and industrial systems. Enhanced power dissipation supports continuous high-current loads. Low Rds(on) improves efficiency and reduces heat generation. Robust temperature tolerance broadens application range.
Suitable for laboratory prototyping and through-hole assembly. Compliance with RoHS environmental standards.
This power MOSFET is best employed in industrial, manufacturing, energy management, and laboratory electronic projects requiring reliable high-voltage switching components. The product is manufactured in China and is new.
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Frequently Asked Questions
The maximum drain-source voltage for this model is 1000 V.
It has a continuous drain current rating of 3.1 A.
The maximum power dissipation supported by this unit is 125 W.
The maximum drain-source resistance Rds(on) is 5 ohms.
This model operates within a temperature range of -55°C to 150°C.
It is housed in a TO-220AB package, designed for through-hole mounting.
The typical gate charge at Vgs is 80 nC.
The maximum gate-source voltage must not exceed ±20 V.
This model is suitable for high-voltage power supplies, motor drives, and energy management circuits.
The dimensions of this MOSFET are 10.41 mm in length, 4.7 mm in width, and 9.01 mm in height.
Yes, it complies with RoHS environmental standards.
It features an N-channel design and operates in enhancement mode.
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