$5.49
$5.33
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
IXYS N-Channel Power MOSFET, 36 A, 300 V, Enhancement Mode, TO-220 Package IXTP36N30P
Specifications
| Country of Origin | India |
|---|---|
| Brand | IXYS |
| Height | 9.15mm |
| Length | 10.66mm |
| Model | IXTP36N30P |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | HiperFET, Polar |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 36A |
| Maximum Drain Source Voltage Vds | 300V |
| Maximum Drain Source Resistance Rds | 110mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 300W |
| Typical Gate Charge Qg @ Vgs | 70nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.5V |
Key Features
- This MOSFET features an enhancement mode channel design for efficient switching.
- Maximum continuous drain current of 36 amperes ensures high current handling.
- TO-220 through-hole mounting package with three pins for easy installation.
- Low drain-source resistance of 110 milliohms reduces power loss.
- Operates reliably in temperatures ranging from -55°C to 150°C.
- Typical gate charge is 70 nanocoulombs at a gate-source voltage.
- Maximum power dissipation rated at 300 watts for robust performance.
- Maximum gate-source voltage is ±30 volts, providing good gate drive tolerance.
Product Description
The IXYS IXTP36N30P is a high-performance N-channel Power MOSFET designed with HiperFET Polar technology, offering robust electrical characteristics for demanding semiconductor applications. It supports a maximum continuous drain current of 36 amperes and a maximum drain-source voltage of 300 volts, making it suitable for power switching and amplification in industrial, automotive, and consumer electronics environments.
This device is packaged in a durable TO-220 through-hole case with three pins, enabling straightforward mounting and heat dissipation. The low on-resistance of 110 milliohms significantly reduces conduction losses, improving efficiency and thermal performance.
The IXTP36N30P features an enhancement mode channel and is engineered to operate reliably across a wide temperature range from -55°C to 150°C. The maximum power dissipation rating of 300 watts supports high load applications, while the typical gate charge of 70 nanocoulombs facilitates fast switching speeds with minimal gate drive energy.
Additional device parameters include a maximum gate-source voltage tolerance of ±30 volts and a forward voltage drop of 1.5 volts. Its compact dimensions fit seamlessly into power management circuits requiring space-efficient components.
This MOSFET is ideal for use in power supplies, motor control circuits, and switching regulators in industrial and commercial electronics. High-speed intrinsic diode provides efficient commutation for inverter circuits and automotive systems.
Robust thermal and electrical design ensures long-term reliability in harsh operating conditions. Designed for use in applications requiring high current and high voltage switching capabilities. Complies with standard semiconductor packaging and mounting conventions for broad compatibility.
Explore our extensive range of semiconductor products in the Electronics & Electricals category on EnvMart for compatible components and accessories to complete your electronic assembly projects.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 36 amperes.
This MOSFET has a maximum drain-source voltage rating of 300 volts.
It is packaged in a TO-220 through-hole case with three pins.
The typical gate charge is 70 nanocoulombs at the specified gate-source voltage.
It operates reliably within a temperature range of -55°C to 150°C.
The maximum power dissipation rated for this device is 300 watts.
The maximum drain-source resistance is 110 milliohms.
This MOSFET is suitable for power supplies, motor control circuits, and switching regulators in industrial and commercial electronics.
The forward voltage drop is 1.5 volts.
The maximum gate-source voltage tolerance is ±30 volts.
The dimensions are 10.66mm in length, 4.83mm in width, and 9.15mm in height.
It features an N-channel enhancement mode design.
Related Products
$0.19
$0.19
-3%
New
Other Products from this brand
$5.33
$5.17
-3%
New
$3.05
$2.96
-3%
New
$83.04
$80.55
-3%
New
$86.93
$84.32
-3%
New
$5.18
$5.03
-3%
New
Recently Viewed Products
$5.49
$5.33
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent