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IXYS HiperFET Polar N-Channel MOSFET 75 A 100 V Enhancement 3-Pin TO-220 IXTP75N10P
Specifications
| Country of Origin | India |
|---|---|
| Brand | IXYS |
| Height | 9.15mm |
| Length | 15.8mm |
| Model | IXTP75N10P |
| Width | 4.9mm |
| Mount Type | Through Hole |
| Series | HiperFET, Polar |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 75A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 25mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 360W |
| Typical Gate Charge Qg @ Vgs | 74nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
Key Features
- Supports continuous drain current up to 75 Amps.
- Maximum drain-source voltage rated at 100 Volts.
- Enhancement mode N-channel with low on resistance of 25 milliohms.
- TO-220 through-hole mounting for easy PCB integration.
- Maximum power dissipation of 360 Watts for high load applications.
- Wide operating temperature range from -55°C to 175°C ensures reliability.
- Typical gate charge of 74 nanocoulombs enables fast switching.
- Gate-source voltage tolerant up to ±20 Volts.
Product Description
The IXYS IXTP75N10P is a high-performance HiperFET Polar N-Channel MOSFET with a maximum continuous drain current of 75 A and a maximum drain-source voltage of 100 V.
This device features an enhancement mode N-channel configuration designed to meet high power switching demands in industrial electronics, power supplies, and motor control applications.
Housed in a 3-pin TO-220 package, it allows through-hole mounting suitable for robust mechanical stability and efficient heat dissipation. The MOSFET offers a low maximum drain-source resistance of 25 milliohms, ensuring minimal conduction losses during operation.
Its maximum power dissipation rating of 360 W supports demanding loads, while the extended operation temperature range from -55°C to 175°C guarantees device reliability under harsh environmental conditions.
The typical gate charge quantity of 74 nC at Vgs enables rapid switching speed making it ideal for power-efficient circuit designs. The device also supports a gate-source voltage range of -20 to +20 V and includes a fast intrinsic diode that improves performance during switching transitions.
Continuous drain current rating of 75 Amps. Drain-source voltage maximum 100 Volts. TO-220 3-pin package for easy PCB mounting. Low Rds(on) resistance of 25 milliohms ensures energy efficiency. High power dissipation capacity of 360 Watts.
Wide operational temperature range. Efficient gate charge supports fast switching. Wide gate-source voltage tolerance. Fast intrinsic diode for enhanced switching. Compact dimensions suitable for standard industrial designs.
This IXYS MOSFET is well-suited for various industrial, power management, and electronic component applications where high current and voltage handling, reliability, and efficient switching are critical.
Explore the Electronics & Electricals category at EnvMart for more high-quality semiconductor devices including MOSFETs to find the right components for your projects.
Explore more products in our Power MOSFET category.
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Frequently Asked Questions
The maximum continuous drain current of this model is 75 Amps.
This MOSFET has a maximum drain-source voltage rating of 100 Volts.
It features a low maximum drain-source resistance of 25 milliohms.
The maximum power dissipation capacity is rated at 360 Watts.
The operating temperature range is from -55°C to 175°C.
It is housed in a 3-pin TO-220 package suitable for through-hole mounting.
The typical gate charge is 74 nanocoulombs at Vgs.
It supports a gate-source voltage tolerance of -20 to +20 Volts.
It is designed for high power switching demands in industrial electronics, power supplies, and motor control applications.
The forward voltage of the intrinsic diode is 1.5 Volts.
The device's low on-resistance and typical gate charge allow for fast switching, making it suitable for power-efficient circuit designs.
This model operates in enhancement mode as an N-channel MOSFET.
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